公开(公告)号：US3913216A

公开(公告)日：1975-10-21

申请号：US37174373

申请日：1973-06-20

申请人： SIGNETICS CORP

发明人： BALLONOFF AARON

IPC分类号： H01L21/00 ,  H01L21/78 ,  B01J17/00

CPC分类号： H01L21/78 ,  H01J9/233 ,  H01L21/00

摘要： A method for fabricating a precision aligned semiconductor array. In a specific embodiment, the method is applied to forming an array of semiconductor diodes useful as an electron bombarded semiconductor target. A wafer is fabricated with the semiconductor devices or circuits spaced on the wafer as they will be in the final array. After completion of fabrication of the devices the wafer has metallization formed on its back. The array is then bonded to metallized pads carried by an insulating substrate. After bonding the array to the substrate, a laser scriber removes a strip of material between adjacent devices so that there is no longer a continuous path of semiconductor between any two devices.

摘要翻译： 一种制造精密对准半导体阵列的方法。 在具体实施例中，该方法被应用于形成用作电子轰击半导体靶的半导体二极管阵列。 制造晶圆，其中半导体器件或电路在晶片上间隔开，因为它们将处于最终阵列。 在器件的制造完成之后，晶片在其背面形成金属化。 然后将阵列结合到由绝缘衬底承载的金属化衬垫。 在将阵列结合到衬底之后，激光划刻器在相邻器件之间移除一条材料条，使得在任何两个器件之间不再有连续的半导体路径。

公开(公告)号：US3893157A

公开(公告)日：1975-07-01

申请号：US36653473

申请日：1973-06-04

申请人： SIGNETICS CORP

发明人： SILZARS ARIS ,  BALLONOFF AARON

IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L23/29 ,  H01L27/00 ,  H01L5/00

CPC分类号： H01L23/291 ,  H01J9/233 ,  H01J29/455 ,  H01L21/00 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation resistance PN junction diode with a radiation shield which is attached to the semiconductor device and extends over, but is separated from, portions of the device which it is desired to have shielded from radiation. The purpose of the shield is to provide a radiation resistant semiconductor target for use in planar electron bombarded semiconductor devices, electron beam recorders, and other devices requiring periodic or continuous electron beam or other low energy radiation monitoring. In accordance with a preferred method of the invention, the electron beam shield is fabricated simultaneously on each of a plurality of PN junction diodes in an array on a semiconductor wafer.

摘要翻译： 具有辐射屏蔽的辐射电阻PN结二极管，其附接到半导体器件并且延伸超过该器件的期望与辐射屏蔽的部分，但是与其隔开。 屏蔽的目的是提供一种用于平面电子轰击的半导体器件，电子束记录器和需要周期性或连续电子束或其他低能量辐射监测的其它器件的耐辐射半导体靶。 根据本发明的优选方法，在半导体晶片上的阵列中的多个PN结二极管的每一个上同时制造电子束屏蔽。