公开(公告)号：US20240345468A1

公开(公告)日：2024-10-17

申请号：US18750609

申请日：2024-06-21

Applicant: SK enpulse Co., Ltd.

Inventor： Hyung-joo LEE ,  Kyuhun KIM ,  JiYeon RYU ,  INKYUN SHIN ,  Seong Yoon KIM ,  Suk Young CHOI ,  Suhyeon KIM ,  SUNG HOON SON ,  Min Gyo JEONG

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 20 of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 20 of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1.





AI
⁢
1

=


XM
⁢
1


XQ
⁢
1






XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.