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    SEMICONDUCTOR DEVICE FABRICATION APPARATUS
    1.
    发明公开
    SEMICONDUCTOR DEVICE FABRICATION APPARATUS 审中-公开

    公开(公告)号：US20240363314A1

    公开(公告)日：2024-10-31

    申请号：US18647944

    申请日：2024-04-26

    Applicant: SK enpulse Co., Ltd.

    Inventor： Jong Kyu LEE ,  Hyun Soo LEE ,  Il Gu YONG ,  Do Hyun CHOI ,  Ho Geun HAN

    IPC: H01J37/32

    CPC classification number: H01J37/32541 ,  C23C16/45565

    Abstract: An embodiment of the present disclosure provides an upper electrode including a flat upper surface; a lower surface facing the upper surface; and a thickness from the upper surface to the lower surface, wherein the lower surface includes a first profile corresponding to the central area of the lower surface and having a first thickness change rate of −0.1 to 0; a third profile surrounding the first profile and having a third thickness change rate of −0.115 to −0.122; and a fifth profile surrounding the third profile and having a fifth thickness change rate of −0.003 to 0.003, wherein the first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values obtained by dividing a change in thickness by a change in radius along a horizontal direction parallel to the upper surface from a center of the lower surface.

    CONDITIONING DEVICE AND METHOD FOR CONTROLLING THE CONDITIONING DEVICE
    4.
    发明公开
    CONDITIONING DEVICE AND METHOD FOR CONTROLLING THE CONDITIONING DEVICE 审中-公开

    公开(公告)号：US20230339072A1

    公开(公告)日：2023-10-26

    申请号：US18302786

    申请日：2023-04-19

    Applicant: SK enpulse Co., Ltd.

    Inventor： Jong Wook YUN ,  Jang Won SEO ,  Su Young MOON ,  Kyung Hwan KIM ,  Tae Kyoung KWON

    IPC: B24B53/017

    CPC classification number: B24B53/017

    Abstract: A conditioning device includes: an ejector for ejecting steam to a rotating polishing pad; and an ejector support supporting the ejector. The ejector includes a plurality of nozzles for ejecting the steam to the polishing pad and a nozzle heater for heating the plurality of nozzles. The nozzle heater is configured to heat nozzles disposed to correspond to a peripheral region of the polishing pad, among the plurality of nozzles, to a higher temperature than nozzles disposed to correspond to a central region of the polishing pad among the plurality of nozzles.

    Polishing pad sheet, polishing pad, and method for manufacturing semiconductor device
    8.
    发明授权
    Polishing pad sheet, polishing pad, and method for manufacturing semiconductor device 有权

    公开(公告)号：US12138736B2

    公开(公告)日：2024-11-12

    申请号：US17544639

    申请日：2021-12-07

    Applicant: SK enpulse Co., Ltd.

    Inventor： Sung Hoon Yun ,  Kyung Hwan Kim ,  Jae In Ahn ,  Jang Won Seo

    IPC: B24B37/22 ,  B24B37/24 ,  B24D3/28 ,  C09G1/16 ,  H01L21/306

    Abstract: A polishing pad sheet which provides optimized interfacial properties for the laminated structure of a polishing pad based on appropriate elasticity and high durability, and in which the polishing pad having the polishing pad sheet applied thereto not only has its intrinsic function such as the polishing rate or the like, but also is capable of realizing the function without damage even during the polishing process in a wet environment for a long time, and a polishing pad to which the polishing pad sheet is applied. The polishing pad sheet includes: a first surface which is a polishing layer attachment surface; and a second surface which is a rear surface of the first surface, wherein the first surface has a value of the following Equation 1 of 4.20 to 5.50:4.20≤(|Sv|)/Sz×P (%)≤5.50.

    BLANK MASK AND METHOD OF FABRICATING THE SAME
    9.
    发明公开
    BLANK MASK AND METHOD OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20240345467A1

    公开(公告)日：2024-10-17

    申请号：US18638000

    申请日：2024-04-17

    Applicant: SK enpulse Co., Ltd.

    Inventor： Tae Wan KIM ,  Geon Gon LEE ,  Min Gyo JEONG ,  Hyung Joo LEE ,  Tae Young KIM

    IPC: G03F1/26 ,  G03F1/82

    CPC classification number: G03F1/26 ,  G03F1/82

    Abstract: A method of fabricating a blank mask, the method including: forming a light-shielding film on a light-transmissive substrate; and cleaning the light-shielding film with a cleaning solution, wherein in the cleaning, the light-shielding film has a thickness change of less than 5 nm. The blank mask may include a light-transmissive substrate and a light-shielding film disposed on the light-transmissive substrate. Further, on an entire surface of the blank mask, a content of halogen ions is less than 0.05 ng/cm2, a content of nitrogen-based ions is less than 2 ng/cm2, and a content of sulfur-based ions is less than 0.1 ng/cm2. The blank mask may be a photomask.

    BLANK MASK AND PHOTOMASK USING THE SAME
    10.
    发明公开
    BLANK MASK AND PHOTOMASK USING THE SAME 审中-公开

    公开(公告)号：US20240061324A1

    公开(公告)日：2024-02-22

    申请号：US18451607

    申请日：2023-08-17

    Applicant: SK enpulse Co., Ltd.

    Inventor： GeonGon LEE ,  Seong Yoon KIM ,  Min Gyo JEONG ,  Hyung Joo LEE ,  Sung Hoon SON ,  Tae Young KIM

    IPC: G03F1/32 ,  G03F1/48

    CPC classification number: G03F1/32 ,  G03F1/48

    Abstract: A blank mask includes a light transmissive substrate and a multilayer comprising a light shielding layer and a phase shift layer disposed between the light transmissive substrate and the light shielding layer. The phase shift layer includes an upper surface facing the light shielding layer and a side surface connected to the upper surface, such that the light shielding layer is disposed on the upper surface and the side surface of the phase shift layer. When viewed from a top surface of the multilayer, the multilayer includes a central portion and an outer portion surrounding the central portion. The outer portion has a curved upper surface, which greatly suppresses damage to the phase shift layer by a cleaning solution and effectively reduces a frequency of particle generation at edges of the phase shift layer and the light shielding layer.

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