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8 条记录 (耗时 0.014 秒)

    BLANK MASK AND PHOTOMASK USING THE SAME
    1.
    发明公开
    BLANK MASK AND PHOTOMASK USING THE SAME 审中-公开

    公开(公告)号：US20240061324A1

    公开(公告)日：2024-02-22

    申请号：US18451607

    申请日：2023-08-17

    申请人： SK enpulse Co., Ltd.

    发明人： GeonGon LEE ,  Seong Yoon KIM ,  Min Gyo JEONG ,  Hyung Joo LEE ,  Sung Hoon SON ,  Tae Young KIM

    IPC分类号： G03F1/32 ,  G03F1/48

    CPC分类号： G03F1/32 ,  G03F1/48

    摘要： A blank mask includes a light transmissive substrate and a multilayer comprising a light shielding layer and a phase shift layer disposed between the light transmissive substrate and the light shielding layer. The phase shift layer includes an upper surface facing the light shielding layer and a side surface connected to the upper surface, such that the light shielding layer is disposed on the upper surface and the side surface of the phase shift layer. When viewed from a top surface of the multilayer, the multilayer includes a central portion and an outer portion surrounding the central portion. The outer portion has a curved upper surface, which greatly suppresses damage to the phase shift layer by a cleaning solution and effectively reduces a frequency of particle generation at edges of the phase shift layer and the light shielding layer.

    BLANK MASK AND PHOTOMASK USING THE SAME
    4.
    发明公开
    BLANK MASK AND PHOTOMASK USING THE SAME 审中-公开

    公开(公告)号：US20240345468A1

    公开(公告)日：2024-10-17

    申请号：US18750609

    申请日：2024-06-21

    申请人： SK enpulse Co., Ltd.

    发明人： Hyung-joo LEE ,  Kyuhun KIM ,  JiYeon RYU ,  INKYUN SHIN ,  Seong Yoon KIM ,  Suk Young CHOI ,  Suhyeon KIM ,  SUNG HOON SON ,  Min Gyo JEONG

    IPC分类号： G03F1/32

    CPC分类号： G03F1/32

    摘要： A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 20 of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 20 of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1.





    AI
    ⁢
    1

    =


    XM
    ⁢
    1


    XQ
    ⁢
    1






    XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.

    PHOTOMASK FOR EXTREME ULTRAVIOLET
    8.
    发明公开
    PHOTOMASK FOR EXTREME ULTRAVIOLET 审中-公开

    公开(公告)号：US20230305382A1

    公开(公告)日：2023-09-28

    申请号：US18187829

    申请日：2023-03-22

    申请人： SK enpulse Co., Ltd.

    发明人： Seong Yoon KIM ,  Tae Young KIM ,  GeonGon LEE ,  Min Gyo JEONG ,  Sung Hoon SON ,  Inkyun SHIN

    IPC分类号： G03F1/24

    CPC分类号： G03F1/24

    摘要： An extreme ultraviolet photomask includes a conductive layer; a substrate disposed on the conductive layer; a multilayer, comprising different metals alternately stacked on the substrate; a protective layer disposed on the multilayer; a low-reflectance part disposed on a portion of the protective layer, wherein the low-reflectance part comprises a first absorbent layer disposed on the portion of the protective layer, a low-reflectance layer formed on the first absorbent layer, and a first intagliated part formed at the portion where the protective layer is exposed; and a high-reflectance part disposed on another portion of the protective layer, wherein the high-reflectance part comprises a second absorbent layer disposed on the other portion of the protective layer, a high-reflectance layer disposed on the second absorbent layer, and a second intagliated part formed at the other where the protective layer is exposed.