公开(公告)号：US20230328960A1

公开(公告)日：2023-10-12

申请号：US17954117

申请日：2022-09-27

申请人： SK hynix Inc.

发明人： Eun Jeong KIM ,  Ji Hoon Kim ,  Hun Joo Lee

IPC分类号： H01L27/108 ,  G11C5/06

CPC分类号： H01L27/10814 ,  G11C5/063 ,  H01L27/10897

摘要： A semiconductor device includes a substrate having a cell area and a peripheral area, transistors in the peripheral area over the substrate, a lower interlayer insulating layer between the transistors, interconnections and a first spacer layer over the transistors and the lower interlayer insulating layer, an upper interlayer insulating layer over the interconnections and the first spacer layer. The first spacer layer is disposed between the interconnections, The first spacer layer includes a first lower spacer layer and a first upper spacer layer over the first lower spacer layer. The first lower spacer layer and the first upper spacer layer include silicon, boron, and nitrogen. A boron concentration of the first lower spacer layer is different from a boron concentration of the first upper spacer layer.

公开(公告)号：US20240130109A1

公开(公告)日：2024-04-18

申请号：US18541486

申请日：2023-12-15

申请人： SK hynix Inc.

发明人： Beom Ho MUN ,  Eun Jeong KIM ,  Jong Kook PARK ,  Seung Mi LEE ,  Ji Won CHOI ,  Kyoung Tak KIM ,  Yun Hyuck JI

IPC分类号： H10B12/00

CPC分类号： H10B12/315 ,  H10B12/0335 ,  H10B12/34 ,  H10B12/482

摘要： A semiconductor device includes: a semiconductor device, comprising: a bit line structure including a bit line contact plug, a bit line, and a bit line hard mask that are sequentially stacked over a substrate; a storage node contact plug that is spaced apart from the bit line structure; a conformal spacer that is positioned between the bit line and the storage node contact plug and includes a low-k material; and a seed liner that is positioned between the conformal spacer and the bit line and thinner than the conformal spacer.

公开(公告)号：US20220059543A1

公开(公告)日：2022-02-24

申请号：US17374578

申请日：2021-07-13

申请人： SK hynix Inc.

发明人： Beom Ho MUN ,  Eun Jeong KIM ,  Jong Kook PARK ,  Seung Mi LEE ,  Ji Won CHOI ,  Kyoung Tak KIM ,  Yun Hyuck JI

IPC分类号： H01L27/108

摘要： A semiconductor device includes: a semiconductor device, comprising: a bit line structure including a bit line contact plug, a bit line, and a bit line hard mask that are sequentially stacked over a substrate; a storage node contact plug that is spaced apart from the bit line structure; a conformal spacer that is positioned between the bit line and the storage node contact plug and includes a low-k material; and a seed liner that is positioned between the conformal spacer and the bit line and thinner than the conformal spacer.