公开(公告)号：US09792970B2

公开(公告)日：2017-10-17

申请号：US15405509

申请日：2017-01-13

申请人： SK hynix Inc.

发明人： Cheol Hoe Kim ,  Kyeong Tae Kim

IPC分类号： G11C8/12 ,  G11C8/18

CPC分类号： G11C8/18 ,  G11C5/147 ,  G11C8/10 ,  G11C8/12

摘要： A semiconductor system includes a first semiconductor device configured to output command addresses; and a second semiconductor device configured to generate a first control signal including a pulse controlled in its pulse width in synchronization with a toggling time of a bank active signal for selecting a bank to be activated in an active operation in response to the command addresses, a second control signal enabled in response to the bank active signal, and an internal voltage in response to the first and second control signals.

公开(公告)号：US09583165B1

公开(公告)日：2017-02-28

申请号：US14995444

申请日：2016-01-14

申请人： SK hynix Inc.

发明人： Cheol Hoe Kim ,  Kyeong Tae Kim

IPC分类号： G11C8/12 ,  G11C8/18 ,  G11C8/10 ,  G11C5/14

CPC分类号： G11C8/18 ,  G11C5/147 ,  G11C8/10 ,  G11C8/12

摘要： A semiconductor system includes a first semiconductor device configured to output command addresses; and a second semiconductor device configured to generate a first control signal including a pulse controlled in its pulse width in synchronization with a toggling time of a bank active signal for selecting a bank to be activated in an active operation in response to the command addresses, a second control signal enabled in response to the bank active signal, and an internal voltage in response to the first and second control signals.

摘要翻译： 半导体系统包括被配置为输出命令地址的第一半导体器件; 以及第二半导体装置，其被配置为响应于所述命令地址而生成包括以其脉冲宽度控制的脉冲的第一控制信号，所述第一控制信号与用于选择要在活动操作中激活的存储体的存储体活动信号的切换时间同步， 所述第二控制信号响应于所述存储体有效信号而被使能，以及响应于所述第一和第二控制信号的内部电压。