公开(公告)号：US20190041451A1

公开(公告)日：2019-02-07

申请号：US16013401

申请日：2018-06-20

Applicant: SK hynix Inc.

Inventor： Na Yeon CHO

IPC: G01R31/26 ,  H01L27/088

Abstract: A semiconductor device may include a change detection circuit and a change determination circuit. The change detection circuit may be configured to generate a detection voltage having a voltage level varied in accordance with a change of a transistor. The change determination circuit may be configured to enable any one of a plurality of determination signals based on the voltage level of the detection voltage.

公开(公告)号：US20150228311A1

公开(公告)日：2015-08-13

申请号：US14252087

申请日：2014-04-14

Applicant: SK hynix Inc.

Inventor： Cheol Hoe KIM ,  Jae Boum PARK ,  Na Yeon CHO

IPC: G11C5/14 ,  G11C7/12 ,  G05F3/16

CPC classification number: G11C5/147 ,  G05F3/16 ,  G11C7/12 ,  G11C29/12005

Abstract: An internal voltage control circuit according to an embodiment may include a source power supply selection unit configured to receive a first internal power supply voltage and a second internal power supply voltage and selecting the first internal power supply voltage and the second internal power supply voltage as a source voltage in response to a test mode enable signal, a first reference voltage generation unit configured to receive the source voltage from the source power supply selection unit, and configured to generate a to first low reference voltage and a first high reference voltage. The reference voltage control circuit may also include a second reference voltage generation unit configured to receive the first internal power supply voltage and configured to generate a second low reference voltage and a second high reference voltage.

Abstract translation: 根据实施例的内部电压控制电路可以包括源电源选择单元，其被配置为接收第一内部电源电压和第二内部电源电压，并且将第一内部电源电压和第二内部电源电压选择为 源电压响应于测试模式使能信号，第一参考电压产生单元被配置为从源电源选择单元接收源电压，并且被配置为生成到第一低参考电压和第一高参考电压。 参考电压控制电路还可以包括第二参考电压产生单元，其被配置为接收第一内部电源电压并被配置为产生第二低参考电压和第二高参考电压。