Abstract:
A semiconductor device may include a change detection circuit and a change determination circuit. The change detection circuit may be configured to generate a detection voltage having a voltage level varied in accordance with a change of a transistor. The change determination circuit may be configured to enable any one of a plurality of determination signals based on the voltage level of the detection voltage.
Abstract:
An internal voltage control circuit according to an embodiment may include a source power supply selection unit configured to receive a first internal power supply voltage and a second internal power supply voltage and selecting the first internal power supply voltage and the second internal power supply voltage as a source voltage in response to a test mode enable signal, a first reference voltage generation unit configured to receive the source voltage from the source power supply selection unit, and configured to generate a to first low reference voltage and a first high reference voltage. The reference voltage control circuit may also include a second reference voltage generation unit configured to receive the first internal power supply voltage and configured to generate a second low reference voltage and a second high reference voltage.