公开(公告)号：US20190305760A1

公开(公告)日：2019-10-03

申请号：US16160733

申请日：2018-10-15

Applicant: SK hynix Inc.

Inventor： Yoon Jae SHIN ,  Jae Boum PARK

IPC: H03K3/012 ,  H03K19/0175 ,  H03K5/24 ,  H03K17/687

Abstract: A voltage generation circuit is provided. The voltage generation circuit may include an enable signal generator, a voltage controller, and a voltage driver. The enable signal generator may generate an enable signal based on a test signal and an active signal. During activation of the enable signal, the voltage controller may compare a reference voltage with a feedback voltage, amplify the result of comparison, and generate a drive voltage. The voltage driver may output an internal voltage by driving the drive voltage, and generate the feedback voltage corresponding to the internal voltage. The feedback voltage may be pulled down during activation of the enable signal.

公开(公告)号：US20190086355A1

公开(公告)日：2019-03-21

申请号：US15952870

申请日：2018-04-13

Applicant: SK hynix Inc.

Inventor： Se Hwan KIM ,  Kyeong Tae KIM ,  Jae Boum PARK

IPC: G01N27/22 ,  G01R27/26

Abstract: A semiconductor apparatus may include a capacitance measuring circuit. The capacitance measuring circuit may include a constant current circuit configured to output a constant current. The capacitance measuring circuit may include a voltage converting circuit configured to convert the constant current into a detection voltage, and compensate for a variation of the detection voltage due to internal leakage current of the voltage converting circuit. The capacitance measuring circuit may include a code generating circuit configured to generate a value obtained by detecting a time elapsed while the detection voltage increases to a reference voltage, as a code signal.

公开(公告)号：US20140049245A1

公开(公告)日：2014-02-20

申请号：US13724355

申请日：2012-12-21

Applicant: SK HYNIX INC.

Inventor： Young Ran KIM ,  Jae Boum PARK ,  Kyoung Youn LEE

IPC: G05F1/46

CPC classification number: G05F1/468

Abstract: A reference voltage generation circuit includes: a reference voltage generation unit configured to generate a plurality of reference voltages having mutually different temperature characteristics, a switching unit configured to select and output one of the plurality of reference voltages in response to a control signal, a temperature detection unit configured to detect temperature change and to output a temperature detection signal, and a control unit configured to generate the control signal in response to the temperature detection to signal.

Abstract translation: 参考电压产生电路包括：参考电压生成单元，被配置为产生具有相互不同的温度特性的多个参考电压;开关单元，被配置为响应于控制信号选择并输出多个参考电压中的一个，温度 检测单元，被配置为检测温度变化并输出温度检测信号;以及控制单元，被配置为响应于所述温度检测而产生所述控制信号以进行信号。

公开(公告)号：US20150228311A1

公开(公告)日：2015-08-13

申请号：US14252087

申请日：2014-04-14

Applicant: SK hynix Inc.

Inventor： Cheol Hoe KIM ,  Jae Boum PARK ,  Na Yeon CHO

IPC: G11C5/14 ,  G11C7/12 ,  G05F3/16

CPC classification number: G11C5/147 ,  G05F3/16 ,  G11C7/12 ,  G11C29/12005

Abstract: An internal voltage control circuit according to an embodiment may include a source power supply selection unit configured to receive a first internal power supply voltage and a second internal power supply voltage and selecting the first internal power supply voltage and the second internal power supply voltage as a source voltage in response to a test mode enable signal, a first reference voltage generation unit configured to receive the source voltage from the source power supply selection unit, and configured to generate a to first low reference voltage and a first high reference voltage. The reference voltage control circuit may also include a second reference voltage generation unit configured to receive the first internal power supply voltage and configured to generate a second low reference voltage and a second high reference voltage.

Abstract translation: 根据实施例的内部电压控制电路可以包括源电源选择单元，其被配置为接收第一内部电源电压和第二内部电源电压，并且将第一内部电源电压和第二内部电源电压选择为 源电压响应于测试模式使能信号，第一参考电压产生单元被配置为从源电源选择单元接收源电压，并且被配置为生成到第一低参考电压和第一高参考电压。 参考电压控制电路还可以包括第二参考电压产生单元，其被配置为接收第一内部电源电压并被配置为产生第二低参考电压和第二高参考电压。

公开(公告)号：US20140321220A1

公开(公告)日：2014-10-30

申请号：US14018732

申请日：2013-09-05

Applicant: SK hynix Inc.

Inventor： Yeon Uk KIM ,  Jae Boum PARK

IPC: G11C29/00

CPC classification number: G11C29/785 ,  G11C17/18

Abstract: A semiconductor memory apparatus according to the embodiment includes: an external connection terminal configured to supply an external voltage; a fuse unit configured to perform a fuse rupture operation; and an interruption circuit unit configured to respond to a test signal to determine whether the external connection terminal is connected to the fuse unit.

Abstract translation: 根据实施例的半导体存储装置包括：外部连接端子，被配置为提供外部电压; 保险丝单元，被配置为执行熔丝断裂操作; 以及中断电路单元，被配置为响应于测试信号以确定外部连接端子是否连接到熔丝单元。