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公开(公告)号：US20210375632A1
公开(公告)日：2021-12-02
申请号：US17082535
申请日：2020-10-28
Applicant: SK hynix Inc.
Inventor： Ji Sok LEE , Sung Koo LEE , Jae Hee SIM
IPC: H01L21/3105 , H01L21/033
Abstract: A method for forming a planarization layer includes: providing a substrate including a trench; coating a pre-thinner over a surface of the trench; forming a gap-filling material in the trench; coating a post-thinner over the gap-filling material; and performing a spinning process to rotate the substrate.
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