-
公开(公告)号:US10157858B2
公开(公告)日:2018-12-18
申请号:US15856695
申请日:2017-12-28
Applicant: SK hynix Inc.
Inventor: Won Duck Jung , Sang Joon Lim , Sung Mook Lim
IPC: H01L23/552 , H01L23/00 , H01L23/482
Abstract: Disclosed is a semiconductor package. The semiconductor package may include a substrate a semiconductor chip mounted over a surface of the substrate such that an active surface of the semiconductor chip faces the surface of the substrate. The semiconductor chip and substrate may be configured for shielding or scattering electromagnetic waves.
-
公开(公告)号:US11069396B2
公开(公告)日:2021-07-20
申请号:US16874236
申请日:2020-05-14
Applicant: SK hynix Inc.
Inventor: Hyung Jin Choi , Sung Mook Lim
IPC: G11C7/22 , G11C11/4072 , G11C11/4074 , G11C11/4091 , G11C7/20 , G11C11/4094 , G11C11/408 , G11C7/06 , G11C11/4093 , G11C16/26 , G11C16/04 , G11C7/10
Abstract: Provided herein may be a memory device and a method of operating the memory device. The memory device includes a memory cell, a page buffer coupled to the memory cell through a bit line and configured to perform a read operation of sensing data stored in the memory cell, wherein the page buffer includes a data storage configured to store data sensed from the memory cell, the read operation includes a precharge period during which a precharge voltage is applied to the bit line, an evaluation period during which a state of the memory cell is incorporated into a voltage of the bit line, and a data storage period during which the data sensed through the bit line is stored in the data storage, and the data storage is initialized during the evaluation period.
-