公开(公告)号：US11114152B1

公开(公告)日：2021-09-07

申请号：US17010126

申请日：2020-09-02

申请人： SK hynix Inc.

发明人： Dong Hyuk Kim ,  Sung Lae Oh ,  Yeong Taek Lee ,  Tae Sung Park ,  Soo Nam Jung

IPC分类号： G11C11/40 ,  G11C5/06 ,  G11C11/4093 ,  G11C11/4091 ,  G11C11/4094

摘要： A semiconductor memory device includes a memory cell; and a page buffer including a sensing circuit that is coupled to the memory cell through a bit line. The page buffer includes a first transistor included in the sensing circuit; and a second transistor not included in the sensing circuit. A cross-sectional dimension of a first contact which is coupled to the first transistor and a cross-sectional dimension of a second contact which is coupled to the second transistor are different from each other. The cross-sectional dimension of the second contact is smaller than the cross-sectional dimension of the first contact.