公开(公告)号：US10513007B2

公开(公告)日：2019-12-24

申请号：US15989396

申请日：2018-05-25

申请人： SKC CO., LTD.

发明人： Jaein Ahn ,  Jang Won Seo ,  Sunghoon Yun ,  Su Young Moon ,  Myung-Ok Kyun

IPC分类号： B24B37/24 ,  H01L21/3105 ,  H01L21/306 ,  B24B37/20 ,  H01L21/321 ,  B24D3/32 ,  C08G18/10 ,  B24B37/22

摘要： The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 μm, a specific gravity of 0.7 to 0.9 g/cm3, a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.

公开(公告)号：US10518383B2

公开(公告)日：2019-12-31

申请号：US15989403

申请日：2018-05-25

申请人： SKC CO., LTD.

发明人： Jaein Ahn ,  Jang Won Seo ,  Sunghoon Yun ,  Su Young Moon ,  Myung-Ok Kyun

IPC分类号： B24B37/24 ,  C08G18/10 ,  C08J9/32 ,  B24D3/32 ,  H01L21/306 ,  B24B37/20 ,  H01L21/321 ,  H01L23/532

摘要： The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 μm, a specific gravity of 0.7 to 0.9 g/cm3, a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.