公开(公告)号：US20250046656A1

公开(公告)日：2025-02-06

申请号：US18789879

申请日：2024-07-31

Applicant: SOCPRA SCIENCES ET GENIE S.E.C.

Inventor： Thierno Mamoudou DIALLO ,  Abderraouf BOUCHERIF ,  Tadeáš HANUŠ

IPC: H01L21/78 ,  C30B25/04 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12 ,  H01L21/02

Abstract: There is described a method of manufacturing a semiconductor device. The method generally has the steps of: depositing graphene on a monocrystalline semiconductor substrate, the graphene having an opening exposing the monocrystalline semiconductor substrate through the graphene; and growing a given monocrystalline semiconductor material from the monocrystalline semiconductor substrate through the opening, said growing including the given monocrystalline semiconductor material outgrowing the opening and covering the graphene thereby forming a monocrystalline semiconductor layer on the graphene.