公开(公告)号：US20240011193A1

公开(公告)日：2024-01-11

申请号：US18041554

申请日：2021-08-19

Applicant: SOCPRA SCIENCES ET GENIE S.E.C.

Inventor： Youcef Ataellah BIOUD ,  Abderraouf BOUCHERIF ,  Richard ARÈS

IPC: C30B33/10 ,  H01L21/02 ,  C30B29/08 ,  C30B33/02 ,  C30B31/22 ,  C25F3/12

CPC classification number: C30B33/10 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  C30B29/08 ,  C30B33/02 ,  C30B31/22 ,  C25F3/12

Abstract: There is described a method of manufacturing a substrate for an optoelectronic device. The method has the steps of: supporting a first layer of a first crystalline material on a second layer of a second crystalline material different from said first crystalline material thereby exposing crystalline defects at a surface of said first layer; etching said first layer using first etching conditions, at least some of said crystalline defects expanding into pores running from said surface of the first layer towards said second layer; and heating said first and second layers up to a first temperature for a first period of time within a given environment, said heating transforming said pores into nanovoids attracting at least some of said crystalline defects away from said surface. In some embodiments, the method has a step of reheating the layers or a step of forming a pore containing region within the first layer.

公开(公告)号：US20240376629A1

公开(公告)日：2024-11-14

申请号：US18692194

申请日：2022-09-27

Applicant: SOCPRA SCIENCES ET GENIE S.E.C.

Inventor： Philippe-Olivier PROVOST ,  Abderraouf BOUCHERIF

IPC: C25F7/00 ,  C25F3/12 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683

Abstract: There is described a wafer receiver for use in an electrochemical porosification process. The wafer receiver generally has an electrode body having a first flat surface, a second flat surface opposite the first flat surface, a groove recessed from the first flat surface and running within a central region of the electrode body, a seat extending annularly around the central region of the electrode body and recessed from the first flat surface, a conduit in fluid communication with the groove and connectable to a vacuum pump; and an annular sealing element received in the seat, the annular sealing element being made of a resilient material resistant to said electrochemical porosification process, the annular sealing element having a wafer receiving surface protruding from the first flat surface when received in the scat.

公开(公告)号：US20250046656A1

公开(公告)日：2025-02-06

申请号：US18789879

申请日：2024-07-31

Applicant: SOCPRA SCIENCES ET GENIE S.E.C.

Inventor： Thierno Mamoudou DIALLO ,  Abderraouf BOUCHERIF ,  Tadeáš HANUŠ

IPC: H01L21/78 ,  C30B25/04 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12 ,  H01L21/02

Abstract: There is described a method of manufacturing a semiconductor device. The method generally has the steps of: depositing graphene on a monocrystalline semiconductor substrate, the graphene having an opening exposing the monocrystalline semiconductor substrate through the graphene; and growing a given monocrystalline semiconductor material from the monocrystalline semiconductor substrate through the opening, said growing including the given monocrystalline semiconductor material outgrowing the opening and covering the graphene thereby forming a monocrystalline semiconductor layer on the graphene.

公开(公告)号：US20240093403A1

公开(公告)日：2024-03-21

申请号：US18264975

申请日：2022-02-10

Applicant: SOCPRA SCIENCES ET GENIE S.E.C.

Inventor： Mohammad Reza AZIZIYAN ,  Ionela-roxana ARVINTE ,  Abderraouf BOUCHERIF ,  Richard ARÈS

IPC: C30B25/20 ,  C30B25/10 ,  C30B25/18 ,  C30B29/08 ,  C30B33/02

CPC classification number: C30B25/20 ,  C30B25/10 ,  C30B25/186 ,  C30B29/08 ,  C30B33/02

Abstract: There is described a method of manufacturing an optoelectronic device. The method generally has: etching a wafer of monocrystalline germanium, said etching forming a given density of pores contained within said monocrystalline germanium, with at least some of said pores being exposed at a surface of said wafer; depositing a substrate layer of a given crystalline material onto said surface, said substrate layer closing exposed ones of said pores; heating said wafer and said substrate layer, said heating transforming said pores into cavity-interspersed pillars interconnected to one another within said wafer; making a semiconductor component integral to said substrate layer, including collectively forming said optoelectronic device; and breaking said cavity-interspersed pillars of said wafer thereby freeing said optoelectronic device from a remaining wafer portion of said wafer.