公开(公告)号：US20190355867A1

公开(公告)日：2019-11-21

申请号：US16074348

申请日：2017-02-01

Applicant: SOITEC

Inventor： Cécile Aulnette ,  Frank Dimroth ,  Eduard Oliva

IPC: H01L31/18 ,  H01L31/056 ,  H01L31/02 ,  H01L31/0735

Abstract: An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.

公开(公告)号：US11430910B2

公开(公告)日：2022-08-30

申请号：US16074348

申请日：2017-02-01

Applicant: Soitec

Inventor： Cécile Aulnette ,  Frank Dimroth ,  Eduard Oliva

IPC: H01L31/044 ,  H01L31/18 ,  H01L31/056 ,  H01L31/02 ,  H01L31/0735

Abstract: An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.