公开(公告)号：US20190355867A1

公开(公告)日：2019-11-21

申请号：US16074348

申请日：2017-02-01

Applicant: SOITEC

Inventor： Cécile Aulnette ,  Frank Dimroth ,  Eduard Oliva

IPC: H01L31/18 ,  H01L31/056 ,  H01L31/02 ,  H01L31/0735

Abstract: An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.

公开(公告)号：US10361326B2

公开(公告)日：2019-07-23

申请号：US14780473

申请日：2014-03-26

Applicant: Soitec

Inventor： Cécile Aulnette ,  Rainer Krause ,  Frank Dimroth ,  Eric Guiot ,  Eric Mazaleyrat ,  Charlotte Drazek

IPC: H01L31/0443 ,  H01L31/028 ,  H01L31/0693 ,  H01L31/054 ,  H01L31/0687 ,  H01L27/142 ,  H01L31/052

Abstract: This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

公开(公告)号：US11430910B2

公开(公告)日：2022-08-30

申请号：US16074348

申请日：2017-02-01

Applicant: Soitec

Inventor： Cécile Aulnette ,  Frank Dimroth ,  Eduard Oliva

IPC: H01L31/044 ,  H01L31/18 ,  H01L31/056 ,  H01L31/02 ,  H01L31/0735

Abstract: An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.