公开(公告)号：US20200295088A1

公开(公告)日：2020-09-17

申请号：US16648981

申请日：2018-09-07

Applicant: Sony Corporation ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yu KATO ,  Yuta INABA ,  Masato KANNO ,  Hideaki MOGI ,  Miki KIMIJIMA ,  Sae MIYAJI

IPC: H01L27/30 ,  H01L51/00

Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

公开(公告)号：US20230134972A1

公开(公告)日：2023-05-04

申请号：US18085101

申请日：2022-12-20

Applicant: Sony Corporation ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yu KATO ,  Yuta INABA ,  Masato KANNO ,  Hideaki MOGI ,  Miki KIMIJIMA ,  Sae MIYAJI

IPC: H10K39/32 ,  H10K85/20 ,  H10K85/60 ,  H10K85/30

Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.
[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

公开(公告)号：US20220285630A1

公开(公告)日：2022-09-08

申请号：US17744916

申请日：2022-05-16

Applicant: Sony Corporation ,  Sony Semiconductor Solutions Corporation

Inventor： Yosuke SAITO ,  Ichiro TAKEMURA ,  Osamu ENOKI ,  Yuki NEGISHI ,  Yuta HASEGAWA ,  Hideaki MOGI ,  Yasuharu UJIIE

IPC: H01L51/00 ,  C07D495/04

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

公开(公告)号：US20180114926A1

公开(公告)日：2018-04-26

申请号：US15572609

申请日：2016-04-19

Applicant: SONY CORPORATION

Inventor： Yasuharu UJIIE ,  Masaki MURATA ,  Yuya KUMAGAI ,  Hideaki MOGI ,  Shintarou HIRATA

IPC: H01L51/00 ,  H01L27/30

Abstract: An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5×10−9 to 1.5×10−7 m:

公开(公告)号：US20200168815A1

公开(公告)日：2020-05-28

申请号：US16612139

申请日：2018-05-07

Applicant: Sony Corporation ,  Sony Semiconductor Solutions Corporation

Inventor： Yosuke SAITO ,  Ichiro TAKEMURA ,  Osamu ENOKI ,  Yuki NEGISHI ,  Yuta HASEGAWA ,  Hideaki MOGI ,  Yasuharu UJIIE

IPC: H01L51/00 ,  C07D495/04 ,  H01L27/30 ,  H01L51/42

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

公开(公告)号：US20200274077A1

公开(公告)日：2020-08-27

申请号：US16761578

申请日：2018-10-30

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yasuharu UJIIE ,  Yosuke SAITO ,  Yuta HASEGAWA ,  Hideaki MOGI ,  Osamu ENOKI ,  Yuki NEGISHI

IPC: H01L51/00 ,  H01L27/30 ,  H01L27/28 ,  H01L51/42 ,  H01L51/44 ,  C07D495/04

Abstract: A photoelectric conversion element of the present disclosure includes: a first electrode: a second electrode opposed to the first electrode; and an organic layer provided between the first electrode and the second electrode, and including an organic photoelectric conversion layer, and at least one layer included in the organic layer is formed including at least one kind of organic semiconductor material represented by a general expression (1).

公开(公告)号：US20190319071A1

公开(公告)日：2019-10-17

申请号：US16316999

申请日：2017-07-20

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yohei HIROSE ,  Iwao YAGI ,  Shintarou HIRATA ,  Hideaki MOGI ,  Masashi BANDO ,  Osamu ENOKI

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44

Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an—upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

公开(公告)号：US20190157331A1

公开(公告)日：2019-05-23

申请号：US16320695

申请日：2017-06-27

Applicant: SONY CORPORATION

Inventor： Masashi BANDO ,  Hideaki MOGI ,  Iwao YAGI ,  Shintarou HIRATA ,  Tetsuji YAMAGUCHI

IPC: H01L27/146 ,  H01L27/30 ,  H04N5/369 ,  H01L51/44

Abstract: An imaging element includes an organic photoelectric conversion layer formed of a mixture of an electron transport material, an organic pigment material, and a hole transport material. The electron transport material has higher electron mobility than the organic pigment material. The hole transport material has higher hole mobility than the organic pigment material. A relation between values of electron affinity of the electron transport material and the organic pigment material, a relation between values of ionization potentials of the hole transport material and the organic pigment material, and a relation between a value of the electron affinity of the electron transport material and a value of an ionization potential of the hole transport material have predetermined relations.

公开(公告)号：US20180219045A1

公开(公告)日：2018-08-02

申请号：US15743228

申请日：2016-07-14

Applicant: SONY CORPORATION

Inventor： Masaki MURATA ,  Hideaki MOGI ,  Shintarou HIRATA ,  Iwao YAGI ,  Yasuharu UJIIE ,  Masashi BANDO ,  Raku SHIRASAWA ,  Hajime KOBAYASHI ,  Mitsunori NAKAMOTO ,  Yuichi TOKITA

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H01L51/00

CPC classification number: H01L27/307 ,  H01L27/146 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/286 ,  H01L51/0074 ,  H01L51/424 ,  H01L51/4253 ,  H01L51/442 ,  H04N9/045 ,  Y02E10/549

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).