公开(公告)号：US20200168815A1

公开(公告)日：2020-05-28

申请号：US16612139

申请日：2018-05-07

Applicant: Sony Corporation ,  Sony Semiconductor Solutions Corporation

Inventor： Yosuke SAITO ,  Ichiro TAKEMURA ,  Osamu ENOKI ,  Yuki NEGISHI ,  Yuta HASEGAWA ,  Hideaki MOGI ,  Yasuharu UJIIE

IPC: H01L51/00 ,  C07D495/04 ,  H01L27/30 ,  H01L51/42

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

公开(公告)号：US20220285630A1

公开(公告)日：2022-09-08

申请号：US17744916

申请日：2022-05-16

Applicant: Sony Corporation ,  Sony Semiconductor Solutions Corporation

Inventor： Yosuke SAITO ,  Ichiro TAKEMURA ,  Osamu ENOKI ,  Yuki NEGISHI ,  Yuta HASEGAWA ,  Hideaki MOGI ,  Yasuharu UJIIE

IPC: H01L51/00 ,  C07D495/04

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

公开(公告)号：US20200099003A1

公开(公告)日：2020-03-26

申请号：US16466387

申请日：2017-10-17

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yasuharu UJIIE ,  Ichiro TAKEMURA ,  Masaki ORIHASHI ,  Yohei HIROSE

IPC: H01L51/44 ,  H01L27/30 ,  H01L27/28 ,  H01L51/42 ,  H01L51/00

Abstract: An imaging element which is formed by sequentially stacking at least an anode, an anode-side buffer layer, a photoelectric conversion layer, and a cathode, in which the anode-side buffer layer includes a material having structural formula: in which thiophene and carbazole are combined.

公开(公告)号：US20210193740A1

公开(公告)日：2021-06-24

申请号：US17057763

申请日：2019-05-13

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yosuke SAITO ,  Sae MIYAJI ,  Masato KANNO ,  Yasuharu UJIIE ,  Yuta HASEGAWA ,  Osamu ENOKI ,  Yuki NEGISHI

IPC: H01L27/30 ,  H01L27/28 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: A first photoelectric conversion element according to an embodiment of the present disclosure incudes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, in which the chromophore and the fullerene or the fullerene derivative are bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.

公开(公告)号：US20210057649A1

公开(公告)日：2021-02-25

申请号：US17045855

申请日：2019-04-04

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Osamu ENOKI ,  Yuki NEGISHI ,  Yuta HASEGAWA ,  Iwao YAGI ,  Yasuharu UJIIE ,  Yosuke SAITO

IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42 ,  H01L51/44

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer disposed to be opposed to and between the first electrode and the second electrode, in which the photoelectric conversion layer includes a first compound represented by the general formula and a second compound having a skeleton different from the first compound.

公开(公告)号：US20200274077A1

公开(公告)日：2020-08-27

申请号：US16761578

申请日：2018-10-30

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yasuharu UJIIE ,  Yosuke SAITO ,  Yuta HASEGAWA ,  Hideaki MOGI ,  Osamu ENOKI ,  Yuki NEGISHI

IPC: H01L51/00 ,  H01L27/30 ,  H01L27/28 ,  H01L51/42 ,  H01L51/44 ,  C07D495/04

Abstract: A photoelectric conversion element of the present disclosure includes: a first electrode: a second electrode opposed to the first electrode; and an organic layer provided between the first electrode and the second electrode, and including an organic photoelectric conversion layer, and at least one layer included in the organic layer is formed including at least one kind of organic semiconductor material represented by a general expression (1).

公开(公告)号：US20220310951A1

公开(公告)日：2022-09-29

申请号：US17842506

申请日：2022-06-16

Applicant: SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yasuharu UJIIE ,  Ichiro TAKEMURA ,  Masaki ORIHASHI ,  Yohei HIROSE

IPC: H01L51/44 ,  H01L27/28 ,  H01L27/30 ,  H01L51/00 ,  H01L51/42

Abstract: An imaging element which is formed by sequentially stacking at least an anode, an anode-side buffer layer, a photoelectric conversion layer, and a cathode, in which the anode-side buffer layer includes a material having structural formula in which thiophene and carbazole are combined.

公开(公告)号：US20240292641A1

公开(公告)日：2024-08-29

申请号：US18567612

申请日：2022-06-22

Applicant: SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yasuharu UJIIE ,  Yuki NEGISHI ,  Yosuke SAITO ,  Mari ICHIMURA

IPC: H10K50/11 ,  H10K30/60 ,  H10K50/15 ,  H10K85/20 ,  H10K85/30 ,  H10K85/60 ,  H10K101/40

CPC classification number: H10K50/11 ,  H10K30/60 ,  H10K50/15 ,  H10K85/211 ,  H10K85/346 ,  H10K85/622 ,  H10K85/633 ,  H10K85/654 ,  H10K85/6572 ,  H10K85/6576 ,  H10K85/658 ,  H10K2101/40

Abstract: A first semiconductor element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed the first electrode; and an organic semiconductor layer that is provided between the first electrode and the second electrode, and including an organic semiconductor material, the organic semiconductor material having a crystal density of greater than 1.26 g/cm3 and less than 1.50 g/cm3 in powder form by X-ray structure analysis, and a molecular weight of 1200 or less, and being available for vacuum deposition film formation.

公开(公告)号：US20210134887A1

公开(公告)日：2021-05-06

申请号：US17096515

申请日：2020-11-12

Applicant: SONY CORPORATION

Inventor： Yasuharu UJIIE ,  Masakazu MUROYAMA ,  Masashi BANDO ,  Masaki MURATA ,  Hideyuki KUMITA ,  Sachiko SAKAIGAWA ,  Shintarou HIRATA ,  Yuya KUMAGAI ,  Yu KATO

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

公开(公告)号：US20180114926A1

公开(公告)日：2018-04-26

申请号：US15572609

申请日：2016-04-19

Applicant: SONY CORPORATION

Inventor： Yasuharu UJIIE ,  Masaki MURATA ,  Yuya KUMAGAI ,  Hideaki MOGI ,  Shintarou HIRATA

IPC: H01L51/00 ,  H01L27/30

Abstract: An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5×10−9 to 1.5×10−7 m: