公开(公告)号：US20160372503A1

公开(公告)日：2016-12-22

申请号：US14898942

申请日：2014-06-23

Applicant: SONY CORPORATION

Inventor： JUN OKUNO ,  KAZUYOSHI YAMASHITA

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14656 ,  H04N5/3696

Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.

Abstract translation: 本技术涉及一种固态成像装置及其驱动方法，以及能够在抑制具有全局快门功能的固态成像装置中的分辨率劣化的同时提高相位差检测的精度的电子装置 和相位差AF功能。 提供一种固态成像装置，包括：像素阵列单元，包括作为包括片上透镜的像素，光电转换单元和电荷累积单元，用于生成捕获图像的成像像素和用于执行的相位差检测像素 其中排列相位差检测器; 以及驱动控制单元，被配置为控制像素的驱动。 成像像素由屏蔽光的电荷累积单元形成。 相位差检测像素以至少一部分光电转换单元和电荷累积单元中的至少一部分不被光遮蔽的方式形成。 本技术可以应用于例如CMOS图像传感器。

公开(公告)号：US20190296083A1

公开(公告)日：2019-09-26

申请号：US16306033

申请日：2017-04-24

Applicant: SONY CORPORATION

Inventor： MINORU IKARASHI ,  SEIJI NONOGUCHI ,  TAKEYUKI SONE ,  HIROAKI SEI ,  KAZUHIRO OHBA ,  JUN OKUNO

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: [Object] To provide a circuit element, a storage device, electronic equipment, a method of writing information into a circuit element, and a method of reading information from a circuit element. [Solution] The circuit element includes: paired inert electrodes; and a switch layer provided between the paired inert electrodes, configured to function as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

公开(公告)号：US20180211987A1

公开(公告)日：2018-07-26

申请号：US15926528

申请日：2018-03-20

Applicant: SONY CORPORATION

Inventor： JUN OKUNO ,  KAZUYOSHI YAMASHITA

IPC: H01L27/146 ,  H04N5/369

Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.