公开(公告)号：US20170162624A1

公开(公告)日：2017-06-08

申请号：US15323818

申请日：2015-06-26

Applicant: SONY CORPORATION

Inventor： Keisuke HATANO ,  Hideaki TOGASHI

IPC: H01L27/148 ,  H04N5/374 ,  H04N5/378

CPC classification number: H01L27/14806 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14689 ,  H04N5/374 ,  H04N5/378

Abstract: The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer. The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.

公开(公告)号：US20210082993A1

公开(公告)日：2021-03-18

申请号：US17108910

申请日：2020-12-01

Applicant: SONY CORPORATION

Inventor： Keisuke HATANO ,  Hideaki TOGASHI

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378

Abstract: The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer. The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.

公开(公告)号：US20190273113A1

公开(公告)日：2019-09-05

申请号：US16415402

申请日：2019-05-17

Applicant: SONY CORPORATION

Inventor： Keisuke HATANO ,  Hideaki TOGASHI

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378

Abstract: The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer.The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.

公开(公告)号：US20160043125A1

公开(公告)日：2016-02-11

申请号：US14780640

申请日：2014-03-27

Applicant: SONY CORPORATION

Inventor： Keisuke HATANO

IPC: H01L27/146 ,  H01L27/28 ,  H01L27/30

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/286 ,  H01L27/307

Abstract: A solid-state image pickup unit includes: a first member including a photoelectric conversion section; and a second member including a reflective plate with a concave surface section, the second member being bonded to a surface opposite to a light incident surface of the first member to allow the concave surface section of the reflective plate to face the photoelectric conversion section.

Abstract translation: 固态摄像单元包括：第一构件，包括光电转换部; 以及第二构件，其包括具有凹面部的反射板，所述第二构件接合到与所述第一构件的光入射面相反的表面，以允许所述反射板的凹面部面对所述光电转换部。