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    SOLID-STATE IMAGE PICKUP DEVICE, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS
    2.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS 有权

    公开(公告)号：US20210082993A1

    公开(公告)日：2021-03-18

    申请号：US17108910

    申请日：2020-12-01

    Applicant: SONY CORPORATION

    Inventor： Keisuke HATANO ,  Hideaki TOGASHI

    IPC: H01L27/148 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378

    Abstract: The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer. The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.

    SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210233948A1

    公开(公告)日：2021-07-29

    申请号：US17053216

    申请日：2019-04-19

    Applicant: SONY CORPORATION

    Inventor： Masahiro JOEI ,  Kenichi MURATA ,  Fumihiko KOGA ,  Iwao YAGI ,  Shintarou HIRATA ,  Hideaki TOGASHI ,  Yosuke SAITO

    IPC: H01L27/146 ,  H01L27/30 ,  H01L29/41 ,  H04N5/3745

    Abstract: A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.

    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权
    固态成像装置和电子装置

    公开(公告)号：US20160204156A1

    公开(公告)日：2016-07-14

    申请号：US14911538

    申请日：2014-08-07

    Applicant: SONY CORPORATION

    Inventor： Hideaki TOGASHI

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14647 ,  H01L2924/0002 ,  H04N5/3745 ,  H04N5/378 ,  H01L2924/00

    Abstract: There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.

    Abstract translation: 提供了一种固态成像装置，包括：设置在半导体基板的第一表面侧的一个或多个光电转换元件; 连接到所述一个或多个光电转换元件并且设置在所述半导体衬底的所述第一表面和第二表面之间的通孔; 以及设置在所述半导体衬底的第二表面上的放大器晶体管和浮动扩散器，其中所述一个或多个光电转换元件经由所述通孔电极耦合到所述放大器晶体管的栅极和所述浮动扩散。

    SOLID-STATE IMAGE PICKUP DEVICE, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS
    9.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20190273113A1

    公开(公告)日：2019-09-05

    申请号：US16415402

    申请日：2019-05-17

    Applicant: SONY CORPORATION

    Inventor： Keisuke HATANO ,  Hideaki TOGASHI

    IPC: H01L27/148 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378

    Abstract: The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer.The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.

    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
    10.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20190057997A1

    公开(公告)日：2019-02-21

    申请号：US16074669

    申请日：2016-11-02

    Applicant: SONY CORPORATION

    Inventor： Hideaki TOGASHI ,  Kosuke NAKANISHI

    IPC: H01L27/146 ,  H01L29/08 ,  H01L29/423

    Abstract: A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.

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