公开(公告)号：US08786742B2

公开(公告)日：2014-07-22

申请号：US13656011

申请日：2012-10-19

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC: H04N3/14 ,  H01L27/146 ,  H01L31/00

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

Abstract: In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

Abstract translation: 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US20130044245A1

公开(公告)日：2013-02-21

申请号：US13656011

申请日：2012-10-19

Applicant: SONY CORPORATION

Inventor： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC: H01L31/0248 ,  H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

Abstract: In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

Abstract translation: 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。