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    Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film
    5.
    发明授权
    Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film 失效
    半导体装置及其制造方法以及多层半导体薄膜的形成方法

    公开(公告)号：US08546796B2

    公开(公告)日：2013-10-01

    申请号：US13771846

    申请日：2013-02-20

    申请人： Sony Corporation

    发明人： Norihito Kobayashi ,  Mari Sasaki ,  Takahiro Ohe

    IPC分类号： H01L51/30

    CPC分类号： H01L51/0062 ,  H01L51/0003 ,  H01L51/0073 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0558

    摘要： A semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.

    摘要翻译： 提供了一种包括设置在基座上的栅电极，栅极绝缘层，源/漏电极和沟道形成区域的半导体器件。 该方法包括以下步骤：通过使用包含以下结构式（1）表示的聚合绝缘材料和二氧杂蒽化合物的混合溶液形成薄膜; 随后干燥该薄膜以诱发聚合物绝缘材料和二氧杂蒽化合物的相分离，由此从二氧杂蒽化合物的聚合物绝缘材料和沟道形成区形成栅极绝缘层：其中R3和R9中的至少一个 表示除氢以外的取代基。

    ANTHANTHRENE BASED COMPOUND AND SEMICONDUCTOR DEVICE
    6.
    发明申请
    ANTHANTHRENE BASED COMPOUND AND SEMICONDUCTOR DEVICE 有权
    基于ANTHANTHRENE的化合物和半导体器件

    公开(公告)号：US20130099223A1

    公开(公告)日：2013-04-25

    申请号：US13713929

    申请日：2012-12-13

    申请人： Sony Corporation

    发明人： Norihito Kobayashi

    IPC分类号： H01L51/00

    CPC分类号： H01L51/006 ,  C07D493/06 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1088 ,  H01L51/0073 ,  H01L51/0558 ,  H05B33/10

    摘要： An anthanthrene based compound of the structural formula (1) is disclosed: wherein X represents an element of the Group 16; n represents an integer of from 0 to 20; m represents an integer of from 1 to 9; a bonding position in the A segment to the B segment, a bonding position in the B segment to the A segment, a bonding position in the B segment to the C segment, and a bonding position in the C segment to the B segment are at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; and each of substituents R1, R2, R3, R4, R5, R7, R8, R9, R10 and R11 independently represents, for example, a substituent of one member selected from the group consisting of a hydrogen atom, an alkyl group, an aryl group, an arylalkyl group and the like.

    摘要翻译： 公开了结构式（1）的基于蒽醌的化合物：其中X表示第16族的元素; n表示0〜20的整数， m表示1〜9的整数， 在A段到B段的接合位置，B段中的粘合位置到A段，B区段到C区段的结合位置以及C区段到B区段的结合位置在 从一个位置到五个位置，从七个位置到十一个位置中的至少一个; 取代基R 1，R 2，R 3，R 4，R 5，R 7，R 8，R 9，R 10和R 11各自独立地表示例如选自氢原子，烷基，芳基 基，芳基烷基等。

    PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE
    7.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE 有权
    光电转换元件和固态成像装置

    公开(公告)号：US20160049595A1

    公开(公告)日：2016-02-18

    申请号：US14805921

    申请日：2015-07-22

    申请人： Sony Corporation

    发明人： Ayumi Nihei ,  Masaki Murata ,  Norihito Kobayashi

    IPC分类号： H01L51/00 ,  H01L27/30 ,  H01L51/44

    CPC分类号： H01L51/0073 ,  C07D493/06 ,  C09B57/00 ,  H01L27/14665 ,  H01L27/307 ,  H01L51/0058 ,  H01L51/0068 ,  H01L51/0076 ,  H01L51/42 ,  H01L51/44 ,  H01L51/442 ,  Y02E10/549

    摘要： Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones.The photoelectric conversion element of the present invention includes:(a-1) a first electrode and a second electrode which are disposed apart from each other; and(a-2) a photoelectric conversion area which is disposed between the first electrode and the second electrode,wherein the photoelectric conversion area includes multiple layers and at least one of the multiple layers is formed of a dioxaanthanthrene-based compound represented by the structural formula (1).

    摘要翻译： 提供了一种光电转换元件，其包括由具有比常规的更好的灵敏度和响应性的有机材料构成的光电转换材料层。 本发明的光电转换元件包括：（a-1）彼此分离设置的第一电极和第二电极; 和（a-2）设置在第一电极和第二电极之间的光电转换区域，其中光电转换区域包括多个层，并且多个层中的至少一个由由结构上的二氧杂蒽类化合物形成 公式1）。

    Anthanthrene based compound and semiconductor device
    8.
    发明授权
    Anthanthrene based compound and semiconductor device 有权
    基于蒽醌的化合物和半导体器件

    公开(公告)号：US08860018B2

    公开(公告)日：2014-10-14

    申请号：US13713929

    申请日：2012-12-13

    申请人： Sony Corporation

    发明人： Norihito Kobayashi

    IPC分类号： H01L29/80 ,  C07D311/78 ,  H01L51/00 ,  C07D493/06 ,  C09K11/06 ,  H05B33/10 ,  H01L51/05

    CPC分类号： H01L51/006 ,  C07D493/06 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1088 ,  H01L51/0073 ,  H01L51/0558 ,  H05B33/10

    摘要： An anthanthrene based compound of the structural formula (1) is disclosed: wherein X represents an element of the Group 16; n represents an integer of from 0 to 20; m represents an integer of from 1 to 9; a bonding position in the A segment to the B segment, a bonding position in the B segment to the A segment, a bonding position in the B segment to the C segment, and a bonding position in the C segment to the B segment are at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; and each of substituents R1, R2, R3, R4, R5, R7, R8, R9, R10 and R11 independently represents, for example, a substituent of one member selected from the group consisting of a hydrogen atom, an alkyl group, an aryl group, an arylalkyl group and the like.

    摘要翻译： 公开了结构式（1）的基于蒽醌的化合物：其中X表示第16族的元素; n表示0〜20的整数， m表示1〜9的整数， 在A段到B段的结合位置，B区段中的粘合位置到A段，B区段到C区段的结合位置以及C区段到B区段的结合位置在 从一个位置到五个位置，从七个位置到十一个位置中的至少一个; 取代基R 1，R 2，R 3，R 4，R 5，R 7，R 8，R 9，R 10和R 11各自独立地表示例如选自氢原子，烷基，芳基 基，芳基烷基等。