公开(公告)号：US20210183934A1

公开(公告)日：2021-06-17

申请号：US16316172

申请日：2017-06-30

Applicant: SONY CORPORATION

Inventor： Kenju NISHIKIDO ,  Takekazu SHINOHARA ,  Shinichiro NOUDO ,  Misato KONDO

IPC: H01L27/146

Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus, in which irregular reflection of light inside a solid-state imaging element package can be suppressed. In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.

公开(公告)号：US20180166487A1

公开(公告)日：2018-06-14

申请号：US15576973

申请日：2016-04-19

Applicant: SONY CORPORATION

Inventor： Shinichiro NOUDO

IPC: H01L27/146 ,  H04N5/369 ,  G03B13/36 ,  G02B7/34

CPC classification number: H01L27/14623 ,  G02B7/34 ,  G02B7/346 ,  G03B13/36 ,  H01L27/14 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/232122 ,  H04N5/3696 ,  H04N5/36961

Abstract: Image plane phase difference pixels that can handle incident light at two or more chief ray angles are realized. A solid-state imaging device includes a pixel, the pixel including a microlens that condenses light from a subject, a photoelectric conversion unit that receives the subject light condensed by the microlens to generate an electrical signal according to an amount of received light, and a light shielding portion provided between the photoelectric conversion unit and the microlens. The light shielding portion includes an edge portion formed across over a light receiving surface of the photoelectric conversion unit, and the edge portion includes a first edge portion and a second edge portion at positions different from each other both in a first direction corresponding to an up and down direction of an output image and a second direction corresponding to a left and right direction of the output image.

公开(公告)号：US20200251513A1

公开(公告)日：2020-08-06

申请号：US16857096

申请日：2020-04-23

Applicant: SONY CORPORATION

Inventor： Shinichiro NOUDO

IPC: H01L27/146 ,  G03B13/36 ,  H01L27/14 ,  G02B7/34 ,  H04N5/232 ,  H04N5/369

Abstract: Image plane phase difference pixels that can handle incident light at two or more chief ray angles are realized. A solid-state imaging device includes a pixel, the pixel including a microlens that condenses light from a subject, a photoelectric conversion unit that receives the subject light condensed by the microlens to generate an electrical signal according to an amount of received light, and a light shielding portion provided between the photoelectric conversion unit and the microlens. The light shielding portion includes an edge portion formed across over a light receiving surface of the photoelectric conversion unit, and the edge portion includes a first edge portion and a second edge portion at positions different from each other both in a first direction corresponding to an up and down direction of an output image and a second direction corresponding to a left and right direction of the output image.

公开(公告)号：US20190252450A1

公开(公告)日：2019-08-15

申请号：US16342314

申请日：2017-07-24

Applicant: SONY CORPORATION

Inventor： Shinichiro NOUDO

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L21/76 ,  H01L27/146 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  H01L31/10 ,  H04N5/369

Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.

公开(公告)号：US20160013233A1

公开(公告)日：2016-01-14

申请号：US14773157

申请日：2014-03-06

Applicant: SONY CORPORATION

Inventor： Shinichiro NOUDO ,  Yoichi OOTSUKA

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14627 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/3572 ,  H04N5/3696

Abstract: There is provided a solid state imaging device including a plurality of imaging pixels arranged two-dimensionally in a matrix configuration and phase difference detecting pixels arranged scatteredly among the imaging pixels, the solid state imaging device including: a first microlens formed for each of the imaging pixels; a planarization film having a lower refractive index than the first microlens and formed on the first microlens; and a second microlens formed only on the planarization film of the phase difference detecting pixel.

Abstract translation: 提供了一种固态成像装置，其包括以矩阵构造二维排列的多个成像像素和在所述成像像素之间分散布置的相位差检测像素，所述固态成像装置包括：为每个成像形成的第一微透镜 像素; 平版化膜，其具有比所述第一微透镜更低的折射率并形成在所述第一微透镜上; 以及仅在相位差检测像素的平坦化膜上形成的第二微透镜。