公开(公告)号：US11289525B2

公开(公告)日：2022-03-29

申请号：US15559345

申请日：2016-03-11

Applicant: SONY CORPORATION

Inventor： Hajime Yamagishi ,  Kiyotaka Tabuchi ,  Masaki Okamoto ,  Takashi Oinoue ,  Minoru Ishida ,  Shota Hida ,  Kazutaka Yamane

IPC: H01L27/146 ,  H01L27/14 ,  H01L23/522 ,  H01L23/528 ,  H01L23/552 ,  H01L23/48 ,  H04N5/357 ,  H04N5/365 ,  H04N5/376 ,  H04N5/378

Abstract: This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.