公开(公告)号：US11217612B2

公开(公告)日：2022-01-04

申请号：US16683379

申请日：2019-11-14

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Kentaro Akiyama ,  Yorito Sakano ,  Takashi Oinoue ,  Yoshiya Hagimoto ,  Yusuke Matsumura ,  Naoyuki Sato ,  Yuki Miyanami ,  Yoichi Ueda ,  Ryosuke Matsumoto

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/355 ,  H04N5/3745 ,  H01L27/02 ,  H04N5/374 ,  H04N5/217 ,  H04N5/235 ,  H04N5/367 ,  H04N5/378

Abstract: The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

公开(公告)号：US11289525B2

公开(公告)日：2022-03-29

申请号：US15559345

申请日：2016-03-11

Applicant: SONY CORPORATION

Inventor： Hajime Yamagishi ,  Kiyotaka Tabuchi ,  Masaki Okamoto ,  Takashi Oinoue ,  Minoru Ishida ,  Shota Hida ,  Kazutaka Yamane

IPC: H01L27/146 ,  H01L27/14 ,  H01L23/522 ,  H01L23/528 ,  H01L23/552 ,  H01L23/48 ,  H04N5/357 ,  H04N5/365 ,  H04N5/376 ,  H04N5/378

Abstract: This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.

公开(公告)号：US10515988B2

公开(公告)日：2019-12-24

申请号：US15551129

申请日：2016-02-12

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Kentaro Akiyama ,  Yorito Sakano ,  Takashi Oinoue ,  Yoshiya Hagimoto ,  Yusuke Matsumura ,  Naoyuki Sato ,  Yuki Miyanami ,  Yoichi Ueda ,  Ryosuke Matsumoto

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/374 ,  H04N5/217 ,  H04N5/235 ,  H04N5/355 ,  H04N5/367 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/02

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.

公开(公告)号：US10070086B2

公开(公告)日：2018-09-04

申请号：US15524185

申请日：2015-10-29

Applicant: SONY CORPORATION

Inventor： Takashi Oinoue

IPC: H01L27/00 ,  H01L31/00 ,  H04N5/374 ,  H04N5/345 ,  H01L27/148 ,  H01L27/146 ,  H04N5/372 ,  H04N3/14

Abstract: The present disclosure relates to a solid-state imaging device capable of receiving light entering a gap between pixel regions of imaging units by the pixel region when a plurality of imaging units is arranged, a method of manufacturing the same, and an electronic device. A CMOS image sensor includes a pixel region formed of a plurality of pixels. A convex lens is provided for each of a plurality of CMOS image sensors. A plurality of CMOS image sensors is arranged on a supporting substrate. The present disclosure is applicable to a solid-state imaging device and the like in which a plurality of CMOS image sensors is arranged on the supporting substrate, for example.