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    Solid-state image sensor, imaging device, and electronic device
    1.
    发明授权
    Solid-state image sensor, imaging device, and electronic device 有权

    公开(公告)号：US10594969B2

    公开(公告)日：2020-03-17

    申请号：US16388685

    申请日：2019-04-18

    Applicant: SONY CORPORATION

    Inventor： Takashi Machida ,  Kazuyoshi Yamashita

    IPC: H04N5/374 ,  H04N5/232 ,  H04N5/355 ,  H04N5/369 ,  H04N5/378 ,  H01L27/14 ,  H01L27/146 ,  G01S17/93 ,  G01S7/4863 ,  G01S17/89 ,  H01L23/522

    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.

    SOLID-STATE IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC APPARATUS
    3.
    发明申请
    SOLID-STATE IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC APPARATUS 审中-公开
    固态成像元件，驱动方法和电子设备

    公开(公告)号：US20140319323A1

    公开(公告)日：2014-10-30

    申请号：US14300989

    申请日：2014-06-10

    Applicant: Sony Corporation

    Inventor： Yusuke Oike ,  Takashi Machida

    IPC: H01L27/146 ,  H01L27/148

    CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/148

    Abstract: A solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.

    Abstract translation: 一种固态成像元件，包括：多个单位像素，每个单位像素均具有光电转换部分，转移部分，其将由所述光电转换部分产生的电荷传送到预定区域;以及排出部分，其将所述预定区域中的电荷排出 ; 在所述单位像素中的互连层下方形成遮光膜，所述遮光膜从除了所述光电转换部的光接收部以外的所述多个单位像素的大致整个表面的光遮蔽; 以及控制施加到所述遮光膜的电压的电压控制器。 电压控制器将施加到遮光膜的电压设置为由排出部分进行电荷排出的第一电压，并且通过转印部分将施加到遮光膜的电压设置为高于电荷转移中的第一电压的第二电压。

    Solid-state image sensor, imaging device, and electronic device
    4.
    发明授权
    Solid-state image sensor, imaging device, and electronic device 有权

    公开(公告)号：US10999545B2

    公开(公告)日：2021-05-04

    申请号：US16892048

    申请日：2020-06-03

    Applicant: SONY CORPORATION

    Inventor： Takashi Machida ,  Kazuyoshi Yamashita

    IPC: H04N5/374 ,  H04N5/355 ,  H04N5/369 ,  H04N5/378 ,  H01L27/14 ,  H01L27/146 ,  H04N5/232 ,  G01S17/931 ,  G01S7/4863 ,  G01S17/89 ,  H01L23/522

    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.

    Solid-state image pickup device, method of driving the same, and electronic apparatus
    5.
    发明授权
    Solid-state image pickup device, method of driving the same, and electronic apparatus 有权

    公开(公告)号：US10362246B2

    公开(公告)日：2019-07-23

    申请号：US15845244

    申请日：2017-12-18

    Applicant: SONY CORPORATION

    Inventor： Takashi Machida ,  Minoru Ishida

    IPC: H04N5/335 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/355 ,  H01L27/30

    Abstract: A solid-state image pickup device according to the present disclosure includes: a pixel array unit, unit pixels being arranged in the pixel array unit, the unit pixels each including a plurality of photoelectric conversion sections; and a driving unit that changes a sensitivity ratio of the plurality of photoelectric conversion sections by performing intermittent driving with respect to storing of signal charges of the plurality of photoelectric conversion sections. That is, the solid-state image pickup device according to the present disclosure changes a sensitivity ratio of the plurality of photoelectric conversion sections by performing intermittent driving with respect to storing of signal charges of the plurality of photoelectric conversion sections.

    SOLID-STATE IMAGE TAKING DEVICE AND ELECTRONIC APPARATUS
    7.
    发明申请
    SOLID-STATE IMAGE TAKING DEVICE AND ELECTRONIC APPARATUS 有权
    固态摄像装置和电子装置

    公开(公告)号：US20160006959A1

    公开(公告)日：2016-01-07

    申请号：US14856064

    申请日：2015-09-16

    Applicant: Sony Corporation

    Inventor： Takashi Machida

    IPC: H04N5/363 ,  H01L27/146 ,  H04N5/378 ,  H04N5/235 ,  H04N5/359 ,  H04N5/3745

    CPC classification number: H04N5/363 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1463 ,  H04N5/2353 ,  H04N5/353 ,  H04N5/3595 ,  H04N5/374 ,  H04N5/37452 ,  H04N5/378

    Abstract: A solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section.

    Abstract translation: 一种包括像素部分和扫描驱动部分的固态图像获取装置，其中包括在预先确定的像素列中的每个像素列上具有沿扫描方向布置的单位像素的像素列，光电 转换部分和电荷保持部分交替重复布置，并且在预先确定的像素区域中的每个像素列上，两个相邻单位像素的电荷保持部分不成比例地布置 相对于光路限制部或光电转换部朝向扫描方向的一侧。

    SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 有权
    固态成像装置，制造固态成像装置的方法和电子装置

    公开(公告)号：US20150137188A1

    公开(公告)日：2015-05-21

    申请号：US14609661

    申请日：2015-01-30

    Applicant: SONY CORPORATION

    Inventor： Yusuke Oike ,  Takahiro Kawamura ,  Shinya Yamakawa ,  Ikuhiro Yamamura ,  Takashi Machida ,  Yasunori Sogoh ,  Naoki Saka

    IPC: H01L27/146

    CPC classification number: H01L27/14612 ,  H01L27/14601 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14656 ,  H01L27/14689 ,  H01L27/14806 ,  H01L27/14862 ,  H04N5/353 ,  H04N5/363 ,  H04N5/37452

    Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

    Abstract translation: 一种固态成像装置，包括光电转换元件，该光电转换元件可操作以根据入射光量产生电荷并在其内积累电荷;电荷保持区域，其中通过光电转换产生的电荷由 光电转换元件被保持直到读出，并且具有完全转移光电转换元件中的电荷完全转移到电荷保持区域中的传输路径的传输门，以及中间传输路径， 在曝光期间由光电转换元件产生的超过预定电荷量的电荷被转移到电荷保持区域中。 完整的传送路径和中间传送路径形成在不同的区域中。

    SOLID-STATE IMAGE TAKING DEVICE AND ELECTRONIC APPARATUS
    9.
    发明申请
    SOLID-STATE IMAGE TAKING DEVICE AND ELECTRONIC APPARATUS 有权
    固态摄像装置和电子装置

    公开(公告)号：US20140084142A1

    公开(公告)日：2014-03-27

    申请号：US14087281

    申请日：2013-11-22

    Applicant: Sony Corporation

    Inventor： Takashi Machida

    IPC: H04N5/378

    CPC classification number: H04N5/363 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1463 ,  H04N5/2353 ,  H04N5/353 ,  H04N5/3595 ,  H04N5/374 ,  H04N5/37452 ,  H04N5/378

    Abstract: A solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section.

    Abstract translation: 一种包括像素部分和扫描驱动部分的固态图像获取装置，其中包括在预先确定的像素列中的每个像素列上具有沿扫描方向布置的单位像素的像素列，光电 转换部分和电荷保持部分交替重复布置，并且在预先确定的像素区域中的每个像素列上，两个相邻单位像素的电荷保持部分不成比例地布置 相对于光路限制部或光电转换部朝向扫描方向的一侧。

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