专利检索 ap:("SONY GROUP CORPORATION") AND inv:"Atsushi Fujiwara" 第 1 页

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发明授权
Semiconductor device and manufacturing method, and electronic appliance 有权

公开(公告)号：US11862656B2

公开(公告)日：2024-01-02

申请号：US17713794

申请日：2022-04-05

申请人： SONY GROUP CORPORATION

发明人： Jun Ogi , Junichiro Fujimagari , Susumu Inoue , Atsushi Fujiwara

IPC分类号： H01L27/146 , H01L23/00

CPC分类号： H01L27/14636 , H01L24/16 , H01L24/48 , H01L27/1469 , H01L27/14627 , H01L27/14632 , H01L27/14634 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L2224/16145 , H01L2224/48463 , H01L2924/146 , H01L2924/18161

摘要： There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.