公开(公告)号：US11862656B2

公开(公告)日：2024-01-02

申请号：US17713794

申请日：2022-04-05

申请人： SONY GROUP CORPORATION

发明人： Jun Ogi ,  Junichiro Fujimagari ,  Susumu Inoue ,  Atsushi Fujiwara

IPC分类号： H01L27/146 ,  H01L23/00

CPC分类号： H01L27/14636 ,  H01L24/16 ,  H01L24/48 ,  H01L27/1469 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2224/16145 ,  H01L2224/48463 ,  H01L2924/146 ,  H01L2924/18161

摘要： There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.

公开(公告)号：US20230307390A1

公开(公告)日：2023-09-28

申请号：US18124484

申请日：2023-03-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Feng Wei KUO ,  Wen-Shiang Liao ,  Chewn-Pu Jou ,  Huan-Neng Chen ,  Lan-Chou Cho ,  William Wu Shen

IPC分类号： H01L23/66 ,  H01L23/552 ,  H01L23/498 ,  H01L23/522 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

CPC分类号： H01L23/66 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5225 ,  H01L23/552 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/18 ,  H01L2223/6622 ,  H01L2223/6638 ,  H01L2224/16225 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1443 ,  H01L2924/146 ,  H01L2924/3025

摘要： A semiconductor package includes a first semiconductor device, a second semiconductor device vertically positioned above the first semiconductor device, and a ground shielded transmission path. The ground shielded transmission path couples the first semiconductor device to the second semiconductor device. The ground shielded transmission path includes a first signal path extending longitudinally between a first end and a second end. The first signal path includes a conductive material. A first insulating layer is disposed over the signal path longitudinally between the first end and the second end. The first insulating layer includes an electrically insulating material. A ground shielding layer is disposed over the insulating material longitudinally between the first end and the second end of the signal path. The ground shielding layer includes a conductive material coupled to ground. The ground shielding layer drives radiation signals received therein to ground to prevent induced noise in the first signal path.

公开(公告)号：US09818712B2

公开(公告)日：2017-11-14

申请号：US14596888

申请日：2015-01-14

申请人： FREESCALE SEMICONDUCTOR, INC.

发明人： Paige M. Holm ,  Vijay Sarihan

IPC分类号： H01L23/02 ,  H01L23/00

CPC分类号： H01L24/17 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06134 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/1319 ,  H01L2224/14134 ,  H01L2224/14179 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/14 ,  H01L2924/146 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2224/03 ,  H01L2224/11

摘要： A device package includes a substrate having an active surface. Electrical connection bumps are deposited on the active surface and are arranged in an array having a perimeter. At least one electronic component is formed at a region of the active surface, where the region is located outside of the perimeter of the array of electrical connection bumps. When the device package is coupled with external circuitry via the electrical connection bumps, the region at which the electronic component is formed is suspended over the electronic circuitry. This region is subject to a lower stress profile than a region of the active surface circumscribed by the perimeter. Thus, stress sensitive electronic components can be located in this lower stress region of the active surface.

公开(公告)号：US20170248590A1

公开(公告)日：2017-08-31

申请号：US15097899

申请日：2016-04-13

申请人： National Tsing Hua University

发明人： Yu-Lin Wang ,  Chen-Pin Hsu ,  Pei-Chi Chen

IPC分类号： G01N33/543 ,  H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H01L21/56 ,  H01L21/48

CPC分类号： H01L24/32 ,  G01D11/245 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/3107 ,  H01L2224/32225 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/0509 ,  H01L2924/06 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/1082 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/1306 ,  H01L2924/13061 ,  H01L2924/13064 ,  H01L2924/146 ,  H01L2924/1461 ,  H01L2924/15747 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106

摘要： Provided is a manufacturing method of a sensor including the following steps. A mold having a cavity is provided. At least one chip is disposed in the cavity. The chip has an active surface and a back surface opposite to each other. The active surface faces toward a bottom surface of the cavity. A polymer material is filled in the cavity to cover the back surface of the chip. A heat treatment is performed, such that the polymer material is solidified to form a polymer substrate. A mold release treatment is performed to isolate the polymer substrate from the cavity. A plurality of conductive lines are formed on a first surface of the polymer substrate. The conductive lines are electrically connected with the chip.

公开(公告)号：US09601455B2

公开(公告)日：2017-03-21

申请号：US14755334

申请日：2015-06-30

申请人： ROHM CO., LTD.

发明人： Yuto Nishiyama ,  Motoharu Haga

IPC分类号： G01R33/02 ,  H01L23/00 ,  H01L21/78 ,  G01R33/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L24/48 ,  G01R33/0005 ,  G01R33/0047 ,  G01R33/02 ,  G01R33/0206 ,  G01R33/24 ,  H01L21/561 ,  H01L21/78 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49838 ,  H01L24/32 ,  H01L24/45 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48108 ,  H01L2224/48145 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/11 ,  H01L2924/146 ,  H01L2924/15153 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device includes: a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction; a semiconductor element mounted on the main surface of the substrate and having at least one element pad; a wire having a bonding portion bonded to the element pad; and a sealing resin formed on the main surface of the substrate for covering the wire and at least a portion of the semiconductor element. The semiconductor element has an element exposed side surface that faces in a direction crossing the thickness direction of the substrate and is exposed from the sealing resin.

公开(公告)号：US20130099378A1

公开(公告)日：2013-04-25

申请号：US13714061

申请日：2012-12-13

申请人： STATS ChipPAC, Ltd.

发明人： NamJu Cho ,  HeeJo Chi ,  HanGil Shin

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L23/50 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/12 ,  H01L23/13 ,  H01L23/28 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/32059 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48105 ,  H01L2224/48145 ,  H01L2224/48157 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/49 ,  H01L2224/73215 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/85005 ,  H01L2224/85447 ,  H01L2224/92163 ,  H01L2224/92164 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/146 ,  H01L2924/15311 ,  H01L2924/171 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/18165 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19105 ,  H05K3/0052 ,  H01L2924/01014 ,  H01L2924/0665 ,  H01L2924/0105 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/81805 ,  H01L2224/85

摘要： A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.

公开(公告)号：US20120119388A1

公开(公告)日：2012-05-17

申请号：US12947442

申请日：2010-11-16

申请人： NamJu Cho ,  HeeJo Chi ,  HanGil Shin

发明人： NamJu Cho ,  HeeJo Chi ,  HanGil Shin

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L23/50 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/12 ,  H01L23/13 ,  H01L23/28 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/32059 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48105 ,  H01L2224/48145 ,  H01L2224/48157 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/49 ,  H01L2224/73215 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/85005 ,  H01L2224/85447 ,  H01L2224/92163 ,  H01L2224/92164 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/146 ,  H01L2924/15311 ,  H01L2924/171 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/18165 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19105 ,  H05K3/0052 ,  H01L2924/01014 ,  H01L2924/0665 ,  H01L2924/0105 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/81805 ,  H01L2224/85

摘要： A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.

摘要翻译： 半导体器件具有安装在载体上的插入器框架。 半导体管芯具有形成在有源表面上的有源表面和凸起。 半导体管芯可以安装在插入器框架的模具开口内或者插入器框架上。 堆叠的半导体管芯也可以安装在插入器框架的模具开口内或插入架上。 在半导体管芯和内插框架之间形成接合线或凸点。 封装剂沉积在插入器框架和半导体管芯上。 在第一半导体管芯的密封剂和凸块之上形成互连结构。 诸如分立无源器件，半导体管芯或堆叠半导体管芯的电子部件安装在半导体管芯和插入器框架上。 电子部件的I / O计数小于半导体管芯的I / O数。

公开(公告)号：US12119307B2

公开(公告)日：2024-10-15

申请号：US17504125

申请日：2021-10-18

申请人： ROCKLEY PHOTONICS LIMITED

发明人： Chia-Te Chou ,  Brett Sawyer ,  David McCann

IPC分类号： H01L23/544 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0655 ,  H01L2223/54426 ,  H01L2224/1301 ,  H01L2224/16167 ,  H01L2224/17517 ,  H01L2924/146 ,  H01L2924/15323

摘要： An assembly. In some embodiments, the assembly includes a first semiconductor chip, a substrate, and a first alignment element. The alignment of the first semiconductor chip and the substrate may be determined at least in part by engagement of the first alignment element with a first recessed alignment feature, in a surface of the first semiconductor chip.

公开(公告)号：US20240044846A1

公开(公告)日：2024-02-08

申请号：US18382368

申请日：2023-10-20

申请人： BFLY OPERATIONS, INC.

发明人： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC分类号： G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

CPC分类号： G01N29/2406 ,  B81C1/00238 ,  B06B1/0292 ,  A61B8/4483 ,  B81B7/007 ,  B81C1/00301 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461 ,  H01L2224/4813 ,  B81C2203/0792 ,  B81C2201/019 ,  B81B2201/0271 ,  B81C2203/036

摘要： An ultrasound device includes: ultrasonic transducer cavities; a membrane comprising a silicon layer that seals the ultrasonic transducer cavities; electrode regions configured to control vibration of the membrane; and a complementary metal-oxide-semiconductor (CMOS) substrate including integrated circuitry that is electrically coupled to the electrode regions. The ultrasonic transducer cavities are disposed between the membrane and the integrated circuitry along a vertical direction of the ultrasound device.

公开(公告)号：US20230207412A1

公开(公告)日：2023-06-29

申请号：US17561432

申请日：2021-12-23

申请人： Intel Corporation

发明人： Ronald SPREITZER ,  Jason GARCIA ,  Ankur AGRAWAL ,  Eleanor Patricia Paras RABADAM ,  Guiyun BAI

IPC分类号： H01L23/31 ,  H01L23/00 ,  B81C1/00 ,  H01L21/48 ,  H01L21/56 ,  B81B7/00 ,  H01S5/0234 ,  H01S5/50

CPC分类号： H01L23/3157 ,  H01L24/16 ,  B81C1/00301 ,  H01L21/4853 ,  H01L21/563 ,  B81B7/007 ,  H01S5/0234 ,  H01S5/50 ,  B81B2207/07 ,  H01L2924/146 ,  H01L2224/16227 ,  H01L2924/1461 ,  H01L2924/18161

摘要： Example techniques to enable a flip chip underfill exclusion zone include use of bump barriers, films or etched substrate cavities to prevent underfill from reaching the flip chip underfill exclusion zone.