TERMINAL AND CONNECTION METHOD
    1.
    发明申请

    公开(公告)号:US20230075929A1

    公开(公告)日:2023-03-09

    申请号:US17904390

    申请日:2021-01-15

    Abstract: An object of the present technology is to prevent damage in a bonded portion between a semiconductor chip and a substrate in a semiconductor device in which the semiconductor chip is mounted on the substrate.
    A terminal is disposed between an electrode of an element and an electrode of a substrate on which the element is mounted, and electrically connects the electrode of the element and the electrode of the substrate. The terminal includes a plurality of unit lattices and a coupling portion. The unit lattices included in the terminal are formed by bonding a plurality of beams in a cube shape. The coupling portion included in the terminal couples adjacent unit lattices among the plurality of unit lattices.

    THERMOELECTRIC POWER GENERATION MODULE AND METHOD OF MANUFACTURING THERMOELECTRIC POWER GENERATION MODULE

    公开(公告)号:US20230263060A1

    公开(公告)日:2023-08-17

    申请号:US18005070

    申请日:2021-06-08

    CPC classification number: H10N10/17 H10N10/01

    Abstract: Provided is a thermoelectric power generation module that uses a thermoelectric power generation element and, for example, improves the efficiency of thermoelectric power generation according to heat generated by a semiconductor component, etc.
    The thermoelectric power generation module includes a heat-dissipating body that dissipates heat generated by a heat-generating body, a thermoelectric power generation element disposed at an approximately central section of a top surface of the heat-dissipating body, and a thermally-responsive body that is disposed on an outer peripheral section of the top surface of the heat-dissipating body and whose thermal resistance changes according to temperature, the thermoelectric power generation element and the thermally-responsive body being disposed on a bottom surface of the heat-generating body, and the thermally-responsive body being formed such that the thermal resistance of the thermally-responsive body becomes larger than that for the thermoelectric power generation element when the heat-generating body has a low temperature and that the thermal resistance of the thermally-responsive body becomes equal to or smaller than that for the thermoelectric power generation element when the heat-generating body has a high temperature.

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