公开(公告)号：US20240047504A1

公开(公告)日：2024-02-08

申请号：US18467364

申请日：2023-09-14

申请人： SONY GROUP CORPORATION

发明人： Taiichiro WATANABE ,  Akihiro YAMADA ,  Hideo KIDO ,  Hiromasa SAITO ,  Keiji MABUCHI ,  Yuko OHGISHI

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14887 ,  H01L27/14603 ,  H01L27/14647 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14625 ,  H01L27/14656

摘要： A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; a plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.