公开(公告)号：US20240006457A1

公开(公告)日：2024-01-04

申请号：US18368820

申请日：2023-09-15

申请人： SONY GROUP CORPORATION

发明人： Hideo KIDO

IPC分类号： H01L27/146 ,  H04N23/75 ,  H04N25/57 ,  H04N25/76 ,  H04N25/621

CPC分类号： H01L27/14656 ,  H01L27/14614 ,  H01L27/14643 ,  H04N23/75 ,  H04N25/57 ,  H04N25/76 ,  H04N25/622

摘要： The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.

公开(公告)号：US20240047504A1

公开(公告)日：2024-02-08

申请号：US18467364

申请日：2023-09-14

申请人： SONY GROUP CORPORATION

发明人： Taiichiro WATANABE ,  Akihiro YAMADA ,  Hideo KIDO ,  Hiromasa SAITO ,  Keiji MABUCHI ,  Yuko OHGISHI

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14887 ,  H01L27/14603 ,  H01L27/14647 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14625 ,  H01L27/14656

摘要： A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; a plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

公开(公告)号：US20220059602A1

公开(公告)日：2022-02-24

申请号：US17517406

申请日：2021-11-02

申请人： SONY GROUP CORPORATION

发明人： Hideo KIDO

IPC分类号： H01L27/146 ,  H04N5/238 ,  H04N5/359 ,  H04N5/374 ,  H04N5/355

摘要： The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.