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公开(公告)号:US11742423B2
公开(公告)日:2023-08-29
申请号:US17761510
申请日:2020-08-20
Applicant: SOUTHEAST UNIVERSITY , CSMC TECHNOLOGIES FAB2 CO., LTD.
Inventor: Jing Zhu , Guichuang Zhu , Nailong He , Sen Zhang , Shaohong Li , Weifeng Sun , Longxing Shi
CPC classification number: H01L29/7824 , H01L29/086 , H01L29/0878 , H01L29/1095
Abstract: A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region (3) having a first conductivity type; a first body region (10) disposed on the drift region (3) and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region (13) disposed in the first body region (10); a second body region (12) disposed in the first conductivity type region (13) and having the second conductivity type; a source region (11) disposed in the second body region (12) and having the first conductivity type; and a contact region (9) disposed in the first body region (10) and having the second conductivity type.