公开(公告)号：US20140097153A1

公开(公告)日：2014-04-10

申请号：US14043818

申请日：2013-10-01

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Huma ASHRAF ,  Anthony BARKER

IPC: C23F1/12

CPC classification number: C23F1/12 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/3081

Abstract: a method of plasma etching a silicon carbide workpiece includes forming a mask on a surface of the silicon carbide workpiece, performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%, and subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions.

Abstract translation: 等离子体蚀刻碳化硅工件的方法包括在碳化硅工件的表面上形成掩模，使用第一组工艺条件在掩模表面上进行初始等离子体蚀刻，其中使用蚀刻剂气体混合物 包括i）氧和ii）以等于50％的体积比存在于蚀刻剂气体混合物中的至少一种富含氟的气体，并且随后使用与第二组工艺条件不同的第二组工艺条件进行本体等离子体蚀刻工艺 第一套工艺条件。