公开(公告)号：US20140113439A1

公开(公告)日：2014-04-24

申请号：US14056529

申请日：2013-10-17

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： JASH PATEL ,  YUFEI LIU

IPC: H01L21/02

CPC classification number: H01L21/02592 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

Abstract: A method is for depositing in a chamber an amorphous silicon layer on a surface of a semiconducting or insulating substrate. In the method, the surface is pretreated with a NH3 plasma prior to deposition of the amorphous silicon layer.

Abstract translation: 一种用于在半导体或绝缘衬底的表面上在室中沉积非晶硅层的方法。 在该方法中，在沉积非晶硅层之前，用NH 3等离子体预处理表面。