公开(公告)号：US20150287637A1

公开(公告)日：2015-10-08

申请号：US14678048

申请日：2015-04-03

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： JASH PATEL ,  JANET HOPKINS

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/66

CPC classification number: H01L21/76898 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069 ,  H01L22/12 ,  H01L22/26

Abstract: A method is for etching a semiconductor substrate to reveal one or more features buried in the substrate. The method includes performing a first etch step using a plasma in which a bias power is applied to the substrate to produce an electrical bias, performing a second etch step without a bias power or with a bias power which is lower than the bias power applied during the first etch step, and alternately repeating the first and second etch steps.

Abstract translation: 一种方法是蚀刻半导体衬底以露出掩埋在衬底中的一个或多个特征。 该方法包括使用等离子体执行第一蚀刻步骤，其中偏压功率施加到衬底以产生电偏压，执行没有偏置功率的第二蚀刻步骤或具有低于施加的偏置功率的偏置功率 第一蚀刻步骤，并交替地重复第一和第二蚀刻步骤。

公开(公告)号：US20140113439A1

公开(公告)日：2014-04-24

申请号：US14056529

申请日：2013-10-17

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： JASH PATEL ,  YUFEI LIU

IPC: H01L21/02

CPC classification number: H01L21/02592 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

Abstract: A method is for depositing in a chamber an amorphous silicon layer on a surface of a semiconducting or insulating substrate. In the method, the surface is pretreated with a NH3 plasma prior to deposition of the amorphous silicon layer.

Abstract translation: 一种用于在半导体或绝缘衬底的表面上在室中沉积非晶硅层的方法。 在该方法中，在沉积非晶硅层之前，用NH 3等离子体预处理表面。