公开(公告)号：US20170025282A1

公开(公告)日：2017-01-26

申请号：US14807399

申请日：2015-07-23

Applicant: SPTS Technologies Limited

Inventor： John Joseph NEUMANN, JR. ,  Kyle Stanton LEBOUITZ

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/0212 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67069

Abstract: According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of: positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenum, germanium, SiGe and tungsten, the second material is silicon dioxide or silicon nitride, and at least one surface of the first material is exposed so as to be contactable by a gas phase chemical etchant; etching the first material with a noble gas fluoride or halogen fluoride gas phase chemical etchant; and exposing the etch chamber to water vapour so that the step of etching the first material is performed in the presence of water vapour.

Abstract translation: 根据本发明，提供了干气相化学蚀刻结构的方法，包括以下步骤：将结构定位在蚀刻室中，该结构包括第一材料和第二材料，其中第一材料选自硅， 钼，锗，SiGe和钨，所述第二材料是二氧化硅或氮化硅，并且所述第一材料的至少一个表面被暴露以便通过气相化学蚀刻剂接触; 用惰性气体氟化物或卤素氟化物气相化学蚀刻剂蚀刻第一种材料; 并将蚀刻室暴露于水蒸汽，使得蚀刻第一材料的步骤在水蒸气存在下进行。