公开(公告)号：US10153135B2

公开(公告)日：2018-12-11

申请号：US15190722

申请日：2016-06-23

Applicant: SPTS Technologies Limited

Inventor： Anthony Paul Wilby ,  Stephen R Burgess ,  Ian Moncrieff ,  Paul Densley ,  Clive L Widdicks ,  Paul Rich ,  Adrian Thomas

IPC: H01J37/32 ,  H01L21/67 ,  C23C14/34

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.