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公开(公告)号：US11521840B2
公开(公告)日：2022-12-06
申请号：US15899634
申请日：2018-02-20
发明人： Anthony Wilby , Steve Burgess , Ian Moncrieff , Clive Widdicks , Scott Haymore , Rhonda Hyndman
IPC分类号： C23C14/35 , H01J37/34 , B81B3/00 , C23C14/50 , H01J37/32 , H01L21/02 , C23C14/34 , H01L21/285 , H01L21/768
摘要： A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.
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公开(公告)号：US10153135B2
公开(公告)日：2018-12-11
申请号：US15190722
申请日：2016-06-23
发明人： Anthony Paul Wilby , Stephen R Burgess , Ian Moncrieff , Paul Densley , Clive L Widdicks , Paul Rich , Adrian Thomas
摘要： An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.
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公开(公告)号：US11008651B2
公开(公告)日：2021-05-18
申请号：US15478283
申请日：2017-04-04
发明人： Scott Haymore , Amit Rastogi , Rhonda Hyndman , Steve Burgess , Ian Moncrieff , Chris Kendal
摘要： A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.
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公开(公告)号：US11913109B2
公开(公告)日：2024-02-27
申请号：US16541635
申请日：2019-08-15
发明人： Tony Wilby , Steve Burgess , Adrian Thomas , Rhonda Hyndman , Scott Haymore , Clive Widdicks , Ian Moncrieff
CPC分类号： C23C14/50 , C23C14/345 , C23C14/3485 , C23C14/35 , C23C14/351 , C23C14/505 , H01J37/32715 , H01J37/3405 , H01J37/3452 , H01J37/3455 , H01J37/3467 , C23C14/542
摘要： A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.
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公开(公告)号：US11718908B2
公开(公告)日：2023-08-08
申请号：US17241237
申请日：2021-04-27
发明人： Scott Haymore , Amit Rastogi , Rhonda Hyndman , Steve Burgess , Ian Moncrieff
CPC分类号： C23C14/505 , C23C14/345 , C23C14/3407 , C23C14/3485 , C23C14/35 , C23C14/50 , C23C14/541 , H01J37/32715 , H01J37/3405 , H01J37/3411 , H01J37/3467 , C23C14/0617 , C23C14/0641 , H01J37/3426
摘要： A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.
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