公开(公告)号：US10153135B2

公开(公告)日：2018-12-11

申请号：US15190722

申请日：2016-06-23

申请人： SPTS Technologies Limited

发明人： Anthony Paul Wilby ,  Stephen R Burgess ,  Ian Moncrieff ,  Paul Densley ,  Clive L Widdicks ,  Paul Rich ,  Adrian Thomas

IPC分类号： H01J37/32 ,  H01L21/67 ,  C23C14/34

摘要： An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

公开(公告)号：US11127568B2

公开(公告)日：2021-09-21

申请号：US16418447

申请日：2019-05-21

申请人： SPTS TECHNOLOGIES LIMITED

发明人： Stephen R. Burgess ,  Anthony Paul Wilby

IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/04 ,  H01J37/34 ,  H01J37/18

摘要： A method is for cleaning a plasma etching apparatus of the type used to etch a substrate and having at least one chamber. The method includes sputtering a metallic material from an electrically conductive coil which is positioned within the at least one chamber onto an interior surface of the at least one chamber to perform a cleaning function.

公开(公告)号：US09728432B2

公开(公告)日：2017-08-08

申请号：US14950879

申请日：2015-11-24

申请人： SPTS TECHNOLOGIES LIMITED

发明人： Stephen R Burgess ,  Anthony Paul Wilby

IPC分类号： H01L21/67 ,  H01L21/677 ,  F24C7/04 ,  H01L21/324

CPC分类号： H01L21/67276 ,  F24C7/04 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67748

摘要： A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10−4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.