公开(公告)号：US12131899B2

公开(公告)日：2024-10-29

申请号：US17326273

申请日：2021-05-20

Applicant: SPTS Technologies Limited

Inventor： Tristan Harper ,  Kathrine Crook

IPC: H01L21/02 ,  H01L23/00

CPC classification number: H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L24/83 ,  H01L2224/83896

Abstract: A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C.

公开(公告)号：US20230079067A1

公开(公告)日：2023-03-16

申请号：US17891089

申请日：2022-08-18

Applicant: SPTS Technologies Limited

Inventor： Tristan Harper ,  Kathrine Crook

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/36

Abstract: According to the present invention there is provided a method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising the steps of: providing the substrate in a chamber; introducing silane (SiH4), a hydrocarbon gas or vapour, nitrogen gas (N2), and hydrogen gas (H2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD at a process temperature of less than about 200° C.

公开(公告)号：US20210391170A1

公开(公告)日：2021-12-16

申请号：US17326273

申请日：2021-05-20

Applicant: SPTS Technologies Limited

Inventor： Tristan Harper ,  Kathrine Crook

IPC: H01L21/02 ,  H01L23/00

Abstract: A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C.