公开(公告)号：US09165762B2

公开(公告)日：2015-10-20

申请号：US13869369

申请日：2013-04-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Andrew Price ,  Mark Carruthers ,  Daniel Archard ,  Stephen Burgess

IPC: H01L21/316 ,  H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

CPC classification number: H01L21/02274 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0234

Abstract: A method of forming silicon dioxide films using plasma enhanced chemical vapor deposition (PECVD) uses tetraethyl orthosilicate (TEOS), oxygen or a source of oxygen, and hydrogen as precursors. The method can be carried out at low temperatures in a range of 125 to 175° C. which is useful for manufacturing wafers with through silicon vias.

Abstract translation: 使用等离子体增强化学气相沉积（PECVD）形成二氧化硅膜的方法使用原硅酸四乙酯（TEOS），氧或氧源，以及氢作为前体。 该方法可以在125-175℃的低温下进行，这对于通过硅通孔制造晶片是有用的。

公开(公告)号：US20240096616A1

公开(公告)日：2024-03-21

申请号：US18232313

申请日：2023-08-09

Applicant: SPTS Technologies Limited

Inventor： Matt Edmonds ,  William Royle ,  Caitlin Lane Jones ,  Daniel Gomez-Sanchez ,  Kathrine Crook

IPC: H01L21/02 ,  C23C16/52 ,  H01J37/32 ,  H01L23/498

CPC classification number: H01L21/02274 ,  C23C16/52 ,  H01J37/32165 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L23/49894 ,  H01J2237/3321

Abstract: Silicon dioxide can be deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD). The substrate includes at least one silicon dioxide layer deposited thereon. A plasma enhanced chemical vapour deposition apparatus can be used to deposit silicon dioxide onto a substrate by plasma enhanced chemical vapour deposition.

公开(公告)号：US20230079067A1

公开(公告)日：2023-03-16

申请号：US17891089

申请日：2022-08-18

Applicant: SPTS Technologies Limited

Inventor： Tristan Harper ,  Kathrine Crook

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/36

Abstract: According to the present invention there is provided a method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising the steps of: providing the substrate in a chamber; introducing silane (SiH4), a hydrocarbon gas or vapour, nitrogen gas (N2), and hydrogen gas (H2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD at a process temperature of less than about 200° C.

公开(公告)号：US11251037B2

公开(公告)日：2022-02-15

申请号：US16541615

申请日：2019-08-15

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Steve Burgess

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  H01J37/32 ,  C23C16/52

Abstract: A method is for depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD). The method includes providing a PECVD apparatus including a chamber and a substrate support disposed within the chamber, positioning a substrate on the substrate support, introducing a nitrogen gas (N2) precursor into the chamber, applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber, introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained, and subsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD.

公开(公告)号：US20210391170A1

公开(公告)日：2021-12-16

申请号：US17326273

申请日：2021-05-20

Applicant: SPTS Technologies Limited

Inventor： Tristan Harper ,  Kathrine Crook

IPC: H01L21/02 ,  H01L23/00

Abstract: A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C.

公开(公告)号：US10309014B2

公开(公告)日：2019-06-04

申请号：US15590063

申请日：2017-05-09

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Mark Carruthers ,  Andrew Price

IPC: C23C16/44 ,  C23C16/452 ,  C23C16/52 ,  B08B7/00 ,  H01J37/32

Abstract: A method of cleaning a chamber of a plasma processing device with radicals includes creating a plasma within a remote plasma source which is separated from the chamber, the plasma including radicals and ions, cleaning the chamber by allowing radicals to enter the chamber from the remote plasma source while preventing the majority of the ions created in the remote plasma source from entering the chamber, detecting a DC bias developed on a component of the chamber during cleaning; and using the detected DC bias to determine an end-point of the cleaning and, on determination of the end-point, to stop the cleaning.

公开(公告)号：US10096468B2

公开(公告)日：2018-10-09

申请号：US15383162

申请日：2016-12-19

Applicant: SPTS Technologies Limited

Inventor： Kathrine Crook ,  Stephen R Burgess ,  Andrew Price

IPC: H01L21/02 ,  H01L29/06

Abstract: A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O2 or with O2 introduced into the process at a flow rate of 250 sccm or less.

公开(公告)号：US12131899B2

公开(公告)日：2024-10-29

申请号：US17326273

申请日：2021-05-20

Applicant: SPTS Technologies Limited

Inventor： Tristan Harper ,  Kathrine Crook

IPC: H01L21/02 ,  H01L23/00

CPC classification number: H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L24/83 ,  H01L2224/83896

Abstract: A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C.

公开(公告)号：US12077863B2

公开(公告)日：2024-09-03

申请号：US18372123

申请日：2023-09-24

Applicant: SPTS Technologies Limited

Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/513

CPC classification number: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

公开(公告)号：US11802341B2

公开(公告)日：2023-10-31

申请号：US17144699

申请日：2021-01-08

Applicant: SPTS Technologies Limited

Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

IPC: C23C16/40 ,  C23C16/513 ,  C23C16/455

CPC classification number: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.