公开(公告)号：US20250120191A1

公开(公告)日：2025-04-10

申请号：US18836429

申请日：2022-12-21

Applicant: SRI International

Inventor： Winston K. Chan ,  David John Hill

IPC: H10F30/225 ,  G01S7/481 ,  H10F71/00 ,  H10F77/124 ,  H10F77/14

Abstract: An example Geiger mode avalanche photodiode includes a first semiconductor alloy forming a compositionally graded gain region configured to form a conduction band having free electrons, a valence band having free holes, and a bandgap between the valence band and the conduction band that varies in size across the graded gain region; a second semiconductor alloy forming an absorber region; and a semiconductor substrate.

公开(公告)号：US20240055545A1

公开(公告)日：2024-02-15

申请号：US18446996

申请日：2023-08-09

Applicant: SRI International

Inventor： David John Hill ,  Winston K. Chan

IPC: H01L31/153 ,  H01L31/111 ,  H05B45/10 ,  H05B47/11

CPC classification number: H01L31/153 ,  H01L31/1113 ,  H05B45/10 ,  H05B47/11

Abstract: An example image intensifier includes a quantum well infrared photodetector (QWIP) configured to receive photons to photoexcite carriers out of a localized quantum state; and a light emitting diode (LED), wherein the photoexcited carriers control the LED.