利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

225 条记录 (耗时 0.024 秒)

    APPARATUS AND METHOD FOR OPTICALLY INITIATING COLLAPSE OF A REVERSE BIASED P-TYPE-N-TYPE JUNCTION
    3.
    发明申请
    APPARATUS AND METHOD FOR OPTICALLY INITIATING COLLAPSE OF A REVERSE BIASED P-TYPE-N-TYPE JUNCTION 有权
    用于光学启动反向偏置P型N型接头的方法的装置和方法

    公开(公告)号：US20150214389A1

    公开(公告)日：2015-07-30

    申请号：US14604703

    申请日：2015-01-24

    申请人： Applied Physical Electronics, L.C.

    发明人： William C. Nunnally

    IPC分类号： H01L31/0288 ,  H01L31/111 ,  H01L31/113 ,  H01L31/11

    CPC分类号： H01L31/0288 ,  H01L31/105 ,  H01L31/1105 ,  H01L31/111 ,  H01L31/1113 ,  H01L31/1136 ,  H01L31/167

    摘要： An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

    摘要翻译： 将创新制造的反向偏置PN结的电场塌缩的光学方法导致半导体开关在平面电子雪崩中从电流阻挡模式转变为电流导通模式。 该开关结构和光学启动开关闭合的方法适用于采用反向偏置PN结的常规半导体开关配置，其包括但不限于晶闸管，双极晶体管和绝缘栅双极晶体管。

    OPTICALLY-TRIGGERED SILICON CONTROLLED RECTIFIER AND METHOD OF FABRICATION OF THE SAME
    4.
    发明申请
    OPTICALLY-TRIGGERED SILICON CONTROLLED RECTIFIER AND METHOD OF FABRICATION OF THE SAME 审中-公开
    光触发硅控制整流器及其制造方法

    公开(公告)号：US20150091048A1

    公开(公告)日：2015-04-02

    申请号：US14500378

    申请日：2014-09-29

    申请人： SCIENTIFIC APPLICATIONS & RESEARCH ASSOCIATES, INC

    发明人： LELAND J. SPANGLER ,  KENSALL D. WISE

    IPC分类号： H01L31/111 ,  H01L31/0232

    CPC分类号： H01L31/1113 ,  H01L31/02327

    摘要： A device includes a semiconductor substrate having a plurality of doped layers forming first and second junctions. The semiconductor substrate includes a first surface and a second surface opposite the first surface. The device includes a plurality of waveguides defined by a plurality of glass inlaid channels defined within the first surface. Each of the plurality of glass inlaid channels extends through the second junction. The device includes a pattern of reflective elements associated with sidewalls of the plurality of glass inlaid channels to reflect light into the plurality of waveguides. A first electrically-conductive layer is disposed on the first surface and covers the plurality of glass inlaid channels.

    摘要翻译： 一种器件包括具有形成第一和第二结的多个掺杂层的半导体衬底。 半导体衬底包括第一表面和与第一表面相对的第二表面。 该装置包括由在第一表面内限定的多个玻璃镶嵌通道限定的多个波导。 多个玻璃镶嵌通道中的每一个延伸穿过第二结。 该装置包括与多个玻璃镶嵌通道的侧壁相关联的反射元件的图案，以将光反射到多个波导中。 第一导电层设置在第一表面上并且覆盖多个玻璃镶嵌通道。

    Imaging Cell Array Integrated Circuit
    5.
    发明申请
    Imaging Cell Array Integrated Circuit 有权
    成像单元阵列集成电路

    公开(公告)号：US20150069217A1

    公开(公告)日：2015-03-12

    申请号：US14023525

    申请日：2013-09-11

    申请人： Geoff W. Taylor

    发明人： Geoff W. Taylor

    IPC分类号： H01L27/146 ,  H01L31/0352

    CPC分类号： H01L31/035218 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14652 ,  H01L27/14689 ,  H01L27/14812 ,  H01L27/14831 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/1113

    摘要： A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

    摘要翻译： 提供一种半导体器件，其包括由形成在衬底上的多个层实现的成像单元的阵列，其中所述多个层包括与至少一个量子点结构间隔开的至少一个调制掺杂量子阱结构。 每个相应的成像单元包括与对应的电荷存储区域间隔开的成像区域。 成像区域的至少一个量子点结构产生由入射电磁辐射的吸收产生的光电流。 所述至少一个调制掺杂量子阱结构限定了用于横向转移光电流以用于电荷存储区域中的电荷累积并由其输出的掩埋沟道。 每个成像单元的至少一个调制掺杂量子阱结构和至少一个量子点结构可以设置在接收入射电磁辐射的谐振腔内或具有周期性阵列孔的结构化金属膜的下方。

    Optoelectronic transmission system and method
    7.
    发明授权
    Optoelectronic transmission system and method 有权
    光电传输系统及方法

    公开(公告)号：US08693883B2

    公开(公告)日：2014-04-08

    申请号：US12704021

    申请日：2010-02-11

    申请人： Jaime Estevez-Garcia ,  Josef-Paul Schaffer

    发明人： Jaime Estevez-Garcia ,  Josef-Paul Schaffer

    IPC分类号： H04B10/00

    CPC分类号： H01L31/02327 ,  H01L31/0232 ,  H01L31/105 ,  H01L31/1105 ,  H01L31/1113 ,  H01L31/167 ,  H01L31/173 ,  H01L33/58

    摘要： An optoelectronic transmission system has a photoemitter semiconductor component and a photodetector semiconductor component. The photoemitter semiconductor component has a radiation source for converting a first electrical signal into a first electromagnetic radiation and a first polarization filter having a first polarization direction for filtering the first electromagnetic radiation. The photodetector semiconductor component has a second polarization filter having a second polarization direction for filtering a second electromagnetic radiation and a sensor element for converting a second electromagnetic radiation which has been polarized by the polarization filter into a second electrical signal. In this case, the first polarization direction of the first polarization filter is identical to the second polarization direction of the second polarization filter.

    摘要翻译： 光电传输系统具有光发射器半导体部件和光电检测器半导体部件。 光发射器半导体部件具有用于将第一电信号转换为第一电磁辐射的辐射源和具有用于滤波第一电磁辐射的第一偏振方向的第一偏振滤光器。 光检测器半导体元件具有第二偏振滤波器，其具有用于滤波第二电磁辐射的第二偏振方向和用于将已被偏振滤波器偏振的第二电磁辐射转换为第二电信号的传感器元件。 在这种情况下，第一偏振滤波器的第一偏振方向与第二偏振滤波器的第二偏振方向相同。

    OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
    8.
    发明申请
    OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME 有权
    光学触发式半导体器件及其制造方法

    公开(公告)号：US20130323873A1

    公开(公告)日：2013-12-05

    申请号：US13960971

    申请日：2013-08-07

    申请人： AHMED ELASSER ,  STEPHEN DALEY ARTHUR ,  ALEXEY VERT ,  STANISLAV IVANOVICH SOLOVIEV ,  PETER ALMERN LOSEE

    发明人： AHMED ELASSER ,  STEPHEN DALEY ARTHUR ,  ALEXEY VERT ,  STANISLAV IVANOVICH SOLOVIEV ,  PETER ALMERN LOSEE

    IPC分类号： H01L31/111

    CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

    摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

    摘要翻译： 晶闸管器件包括半导体本体和导电阳极。 半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。 导电阳极设置在半导体本体的第一侧上。 光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。 开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。

    LIGHT ACTIVATED SILICON CONTROLLED SWITCH
    9.
    发明申请
    LIGHT ACTIVATED SILICON CONTROLLED SWITCH 有权
    光活化硅控制开关

    公开(公告)号：US20110003441A1

    公开(公告)日：2011-01-06

    申请号：US12882640

    申请日：2010-09-15

    申请人： THOMAS J. KRUTSICK

    发明人： THOMAS J. KRUTSICK

    IPC分类号： H01L21/332

    CPC分类号： H01L27/144 ,  H01L31/1113

    摘要： The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.

    摘要翻译： 本发明提供一种光学触发开关和形成光学触发开关的方法。 光触发开关包括其中形成有至少一个沟槽的硅层和形成在硅层中的至少一个硅二极管。 开关还包括形成在硅层中的第一晶闸管。 第一晶闸管通过沟槽与硅二极管物理和电隔离，并且第一晶闸管被配置为响应于由硅二极管产生的电磁辐射而导通。

    Light activated silicon controlled switch
    10.
    发明授权
    Light activated silicon controlled switch 有权
    光激活硅控开关

    公开(公告)号：US07821016B2

    公开(公告)日：2010-10-26

    申请号：US12061085

    申请日：2008-04-02

    申请人： Thomas Joseph Krutsick

    发明人： Thomas Joseph Krutsick

    IPC分类号： H01L27/15

    CPC分类号： H01L27/144 ,  H01L31/1113

    摘要： The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.

    摘要翻译： 本发明提供一种光学触发开关和形成光学触发开关的方法。 光触发开关包括其中形成有至少一个沟槽的硅层和形成在硅层中的至少一个硅二极管。 开关还包括形成在硅层中的第一晶闸管。 第一晶闸管通过沟槽与硅二极管物理和电隔离，并且第一晶闸管被配置为响应于由硅二极管产生的电磁辐射而导通。