Semiconductor Device and Method of Forming Magnetic Field Shielding with Ferromagnetic Material

    公开(公告)号:US20180261550A1

    公开(公告)日:2018-09-13

    申请号:US15456873

    申请日:2017-03-13

    CPC classification number: H01L23/552 H01L23/3128 H01L23/3135

    Abstract: A semiconductor device has a substrate and a semiconductor component disposed over the substrate. A discrete electrical device can be disposed over the substrate. An encapsulant is deposited over the substrate and semiconductor component. A ferromagnetic material is disposed over the encapsulant. The ferromagnetic material includes one or more ferrite type materials or other material having a crystalline structure exhibiting ferromagnetic properties. The ferromagnetic material includes a ferromagnetic film with a polyethylene terephthalate layer, ferrite layer, and adhesive layer. The ferromagnetic film is provided from the sheet of ferromagnetic films. A shielding layer is formed over the ferromagnetic material and around the semiconductor component. The ferromagnetic material provides magnetic shielding to reduce the influence of magnetic flux fields on the semiconductor die over all frequency bands, including low-frequency interference, by forming a low reluctance magnetic flux loop to redirect the magnetic flux fields away from the semiconductor die.

    Semiconductor device and method of forming magnetic field shielding with ferromagnetic material

    公开(公告)号:US10388611B2

    公开(公告)日:2019-08-20

    申请号:US15456873

    申请日:2017-03-13

    Abstract: A semiconductor device has a substrate and a semiconductor component disposed over the substrate. A discrete electrical device can be disposed over the substrate. An encapsulant is deposited over the substrate and semiconductor component. A ferromagnetic material is disposed over the encapsulant. The ferromagnetic material includes one or more ferrite type materials or other material having a crystalline structure exhibiting ferromagnetic properties. The ferromagnetic material includes a ferromagnetic film with a polyethylene terephthalate layer, ferrite layer, and adhesive layer. The ferromagnetic film is provided from the sheet of ferromagnetic films. A shielding layer is formed over the ferromagnetic material and around the semiconductor component. The ferromagnetic material provides magnetic shielding to reduce the influence of magnetic flux fields on the semiconductor die over all frequency bands, including low-frequency interference, by forming a low reluctance magnetic flux loop to redirect the magnetic flux fields away from the semiconductor die.

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