Semiconductor device and method of integrating RF antenna interposer with semiconductor package

    公开(公告)号:US11735530B2

    公开(公告)日:2023-08-22

    申请号:US17445908

    申请日:2021-08-25

    CPC classification number: H01L23/5386 H01L25/18 H01L25/50 H01Q1/2283

    Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

    Semiconductor Device and Method of Integrating RF Antenna Interposer with Semiconductor Package

    公开(公告)号:US20230067475A1

    公开(公告)日:2023-03-02

    申请号:US17445908

    申请日:2021-08-25

    Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

    Semiconductor device and method of integrating RF antenna interposer with semiconductor package

    公开(公告)号:US12100663B2

    公开(公告)日:2024-09-24

    申请号:US18344366

    申请日:2023-06-29

    CPC classification number: H01L23/5386 H01L25/18 H01L25/50 H01Q1/2283

    Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

    Semiconductor Device and Method of Integrating RF Antenna Interposer with Semiconductor Package

    公开(公告)号:US20230343720A1

    公开(公告)日:2023-10-26

    申请号:US18344366

    申请日:2023-06-29

    CPC classification number: H01L23/5386 H01L25/50 H01L25/18 H01Q1/2283

    Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

    Semiconductor Device and Method of Forming RDL Hybrid Interposer Substrate

    公开(公告)号:US20230119181A1

    公开(公告)日:2023-04-20

    申请号:US17451166

    申请日:2021-10-18

    Abstract: A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. The first electrical component has a second substrate, and redistribution layer formed over the second substrate. The first electrical component is disposed over the redistribution layer. The heat spreader is disposed over the first electrical component. A heat spreader is disposed over the first electrical component. The heat spreader has a first horizontal portion, second horizontal portion vertically offset from the first horizontal portion, and an angled portion connecting the first horizontal portion from the second horizontal portion. The second horizontal portion attaches to a surface of the first substrate proximate to a first side of the first electrical component. The heat spreader attaches to the first substrate proximate to a first side of the first electrical component and remains open proximate to a second side of the first electrical component.

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