公开(公告)号：US20230067475A1

公开(公告)日：2023-03-02

申请号：US17445908

申请日：2021-08-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： NamJu Cho ,  YoungCheol Kim ,  HaengCheol Choi

IPC: H01L23/538 ,  H01L25/18 ,  H01L25/00 ,  H01Q1/22

Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

公开(公告)号：US09748157B1

公开(公告)日：2017-08-29

申请号：US13904401

申请日：2013-05-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HeeJo Chi ,  HanGil Shin ,  NamJu Cho ,  Kyung Moon Kim

IPC: H01L23/00 ,  H01L23/28 ,  H01L21/56

CPC classification number: H01L23/28 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2924/14 ,  H01L2924/1533 ,  H01L2924/15331 ,  H01L2924/00

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: a base substrate having a bottom pad; an integrated circuit device mounted on the base substrate; an interposer having a package interconnect mounted on the base substrate, the package interconnect includes an underside base portion having an irregular surface characteristic of a coining process; and an encapsulation between the interposer and the base substrate.

公开(公告)号：US10573600B2

公开(公告)日：2020-02-25

申请号：US15649491

申请日：2017-07-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HeeJo Chi ,  NamJu Cho ,  JunWoo Myung

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683 ,  H01L23/498 ,  H01L23/552 ,  H01L25/065 ,  H05K1/18 ,  H01L23/31 ,  H01L23/367 ,  H05K3/00 ,  H05K3/42

Abstract: A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

公开(公告)号：US11735530B2

公开(公告)日：2023-08-22

申请号：US17445908

申请日：2021-08-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： NamJu Cho ,  YoungCheol Kim ,  HaengCheol Choi

IPC: H01L25/18 ,  H01L23/538 ,  H01L25/00 ,  H01Q1/22

CPC classification number: H01L23/5386 ,  H01L25/18 ,  H01L25/50 ,  H01Q1/2283

Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

公开(公告)号：US10510703B2

公开(公告)日：2019-12-17

申请号：US15594443

申请日：2017-05-12

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HeeJo Chi ,  HanGil Shin ,  NamJu Cho

IPC: H01L23/00 ,  H01L23/528 ,  H01L21/768 ,  H01L23/498 ,  H01L21/56 ,  H01L21/48 ,  H01L23/538 ,  H01L21/683

Abstract: A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.

公开(公告)号：US20170309572A1

公开(公告)日：2017-10-26

申请号：US15649491

申请日：2017-07-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HeeJo Chi ,  NamJu Cho ,  JunWoo Myung

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/552 ,  H01L23/498 ,  H01L21/683 ,  H01L21/56 ,  H01L25/065 ,  H05K1/18 ,  H05K3/42 ,  H05K3/00 ,  H01L23/367 ,  H01L23/31

Abstract: A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

公开(公告)号：US12100663B2

公开(公告)日：2024-09-24

申请号：US18344366

申请日：2023-06-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： NamJu Cho ,  YoungCheol Kim ,  HaengCheol Choi

IPC: H01L23/538 ,  H01L25/00 ,  H01L25/18 ,  H01Q1/22

CPC classification number: H01L23/5386 ,  H01L25/18 ,  H01L25/50 ,  H01Q1/2283

Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

公开(公告)号：US20230343720A1

公开(公告)日：2023-10-26

申请号：US18344366

申请日：2023-06-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： NamJu Cho ,  YoungCheol Kim ,  HaengCheol Choi

IPC: H01L23/538 ,  H01L25/00 ,  H01L25/18 ,  H01Q1/22

CPC classification number: H01L23/5386 ,  H01L25/50 ,  H01L25/18 ,  H01Q1/2283

Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

公开(公告)号：US20230119181A1

公开(公告)日：2023-04-20

申请号：US17451166

申请日：2021-10-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JongTae Kim ,  NamJu Cho ,  HaengCheol Choi

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/552 ,  H01L25/065

Abstract: A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. The first electrical component has a second substrate, and redistribution layer formed over the second substrate. The first electrical component is disposed over the redistribution layer. The heat spreader is disposed over the first electrical component. A heat spreader is disposed over the first electrical component. The heat spreader has a first horizontal portion, second horizontal portion vertically offset from the first horizontal portion, and an angled portion connecting the first horizontal portion from the second horizontal portion. The second horizontal portion attaches to a surface of the first substrate proximate to a first side of the first electrical component. The heat spreader attaches to the first substrate proximate to a first side of the first electrical component and remains open proximate to a second side of the first electrical component.

公开(公告)号：US20170250154A1

公开(公告)日：2017-08-31

申请号：US15594443

申请日：2017-05-12

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HeeJo Chi ,  HanGil Shin ,  NamJu Cho

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L24/19 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/528 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/73 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/08146 ,  H01L2224/08235 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/19 ,  H01L2224/24227 ,  H01L2224/25171 ,  H01L2224/82039 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10322 ,  H01L2924/10324 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/153 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/82 ,  H01L2224/08

Abstract: A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.