公开(公告)号：US20230067475A1

公开(公告)日：2023-03-02

申请号：US17445908

申请日：2021-08-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： NamJu Cho ,  YoungCheol Kim ,  HaengCheol Choi

IPC: H01L23/538 ,  H01L25/18 ,  H01L25/00 ,  H01Q1/22

Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

公开(公告)号：US12009314B2

公开(公告)日：2024-06-11

申请号：US17819271

申请日：2022-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YoungCheol Kim ,  ChoonHeung Lee ,  WonGyou Kim

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/49 ,  H01L23/498

CPC classification number: H01L23/552 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/49 ,  H01L23/49838 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/3025

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US20230420382A1

公开(公告)日：2023-12-28

申请号：US17808613

申请日：2022-06-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  JinHee Jung ,  YoungCheol Kim

IPC: H01L23/552 ,  H01L25/16 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01L25/165 ,  H01L24/96 ,  H01L23/49816 ,  H01L24/16 ,  H01L2224/16235 ,  H01L2924/3025 ,  H01L24/97

Abstract: A semiconductor device has a substrate. A first electrical component and second electrical component are disposed over the substrate. A conductive pillar is formed over the substrate between the first electrical component and second electrical component. A first shielding layer is formed over the first electrical component and conductive pillar by jet printing conductive material. A second shielding layer is formed over the first electrical component and second electrical component by sputtering, spraying, or plating conductive material. An insulating layer is optionally formed between the first shielding layer and second shielding layer by jet printing insulating material over the first shielding layer.

公开(公告)号：US20220384361A1

公开(公告)日：2022-12-01

申请号：US17819271

申请日：2022-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YoungCheol Kim ,  ChoonHeung Lee ,  WonGyou Kim

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L23/49

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US11450618B2

公开(公告)日：2022-09-20

申请号：US17032005

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YoungCheol Kim ,  ChoonHeung Lee ,  WonGyou Kim

IPC: H01L23/522 ,  H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L23/49

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US12218114B2

公开(公告)日：2025-02-04

申请号：US17452489

申请日：2021-10-27

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： KyungOe Kim ,  YoungCheol Kim ,  HeeSoo Lee

IPC: H01L25/16 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L31/12

Abstract: A semiconductor device has an interposer. A first semiconductor die with a photonic portion is disposed over the interposer. The photonic portion extends outside a footprint of the interposer. The interposer and first semiconductor die are disposed over a substrate. An encapsulant is deposited between the interposer and substrate. The photonic portion remains exposed from the encapsulant.

公开(公告)号：US12100663B2

公开(公告)日：2024-09-24

申请号：US18344366

申请日：2023-06-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： NamJu Cho ,  YoungCheol Kim ,  HaengCheol Choi

IPC: H01L23/538 ,  H01L25/00 ,  H01L25/18 ,  H01Q1/22

CPC classification number: H01L23/5386 ,  H01L25/18 ,  H01L25/50 ,  H01Q1/2283

Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

公开(公告)号：US20230343720A1

公开(公告)日：2023-10-26

申请号：US18344366

申请日：2023-06-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： NamJu Cho ,  YoungCheol Kim ,  HaengCheol Choi

IPC: H01L23/538 ,  H01L25/00 ,  H01L25/18 ,  H01Q1/22

CPC classification number: H01L23/5386 ,  H01L25/50 ,  H01L25/18 ,  H01Q1/2283

Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

公开(公告)号：US20240021566A1

公开(公告)日：2024-01-18

申请号：US17812836

申请日：2022-07-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WooSoon Kim ,  JoonYoung Choi ,  YoungCheol Kim ,  KyungOe Kim

IPC: H01L23/00 ,  H01L25/16 ,  H01L21/56

CPC classification number: H01L24/32 ,  H01L24/94 ,  H01L24/97 ,  H01L24/16 ,  H01L24/73 ,  H01L25/167 ,  H01L24/27 ,  H01L21/563 ,  H01L2924/12043 ,  H01L2924/13056 ,  H01L2924/15311 ,  H01L2924/182 ,  G02B6/13

Abstract: A semiconductor device has a semiconductor die with a sensitive area. A dam wall is formed over the semiconductor die proximate to the sensitive area. In one embodiment, the dam wall has a vertical segment and side wings. The dam wall can have a plurality of rounded segments integrated with a plurality of vertical segments as a unitary body. Alternatively, the dam wall has a plurality of separate vertical segments arranged in two or more overlapping rows. A plurality of conductive posts is formed over the semiconductor die. An electrical component is disposed over the semiconductor die. The semiconductor die and electrical component are disposed over a substrate. An insulating layer is formed over the substrate outside the dam wall. An underfill material is deposited between the semiconductor die and substrate. The dam wall and insulating layer inhibit the underfill material from contacting any portion of the sensitive area.

公开(公告)号：US11735530B2

公开(公告)日：2023-08-22

申请号：US17445908

申请日：2021-08-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： NamJu Cho ,  YoungCheol Kim ,  HaengCheol Choi

IPC: H01L25/18 ,  H01L23/538 ,  H01L25/00 ,  H01Q1/22

CPC classification number: H01L23/5386 ,  H01L25/18 ,  H01L25/50 ,  H01Q1/2283

Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.