公开(公告)号：US20240234229A1

公开(公告)日：2024-07-11

申请号：US18395641

申请日：2023-12-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JiEun KWON ,  KyoWang KOO ,  HyunYoung KIM ,  SooBin YOO

IPC: H01L23/31 ,  H01L23/498

CPC classification number: H01L23/3121 ,  H01L23/315 ,  H01L23/49811

Abstract: A method for making a semiconductor device using a double side molding technology is provided. The method includes: providing a substrate having a first surface and a second surface opposite to the first surface, wherein the second surface of the substrate is uneven; forming a coating on the second surface of the substrate such that a first surface of the coating, which is facing away from the second surface of the substrate, is even; mounting a first electronic component on the first surface of the substrate; and forming a first encapsulant on the first surface of the substrate to cover the first electronic component.