公开(公告)号：US20230411346A1

公开(公告)日：2023-12-21

申请号：US18332023

申请日：2023-06-09

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JoonYoung CHOI ,  WooSoon KIM ,  SeongKwon HONG ,  GaYeon KIM

IPC: H01L23/00 ,  H01L23/373 ,  H01L23/367 ,  H01L21/48

CPC classification number: H01L24/81 ,  H01L2224/81986 ,  H01L23/3675 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L21/4882 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/73204 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/35121 ,  H01L2924/1616 ,  H01L2924/16251 ,  H01L2924/1632 ,  H01L23/3736

Abstract: A semiconductor device and a method for forming the same are provided. The method includes: providing a substrate; providing a semiconductor die having a first die surface and a second die surface opposite to the first die surface; attaching the first die surface to the substrate via an interconnect structure comprising solder; and irradiating the second die surface with a laser beam, wherein the laser beam passes through the semiconductor die and reflows the solder of the interconnect structure. In the method, laser-assisted bonding can is used to reflow solder bumps, and thermal interface material can be formed after the laser-assisted bonding.